Ordering number : ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features • • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. unit : mm 2087A [2SK3448] 2.5 1.45 1.0 1.0 4.5 1.0 6.9 4.0 1.0 0.6 0.5 0.9 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate Specifications 2.54 2.54 SANYO : NMP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V ID 2.5 A 10 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 60 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=1.5A 1.0 RDS(on)1 RDS(on)2 ID=1.5A, VGS=10V ID=1.0A, VGS=4V 2.7 max Unit V 10 µA ±10 µA 2.4 V 115 150 mΩ 150 210 mΩ 3.8 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1500 TS IM TA-2921 No.6785-1/4 2SK3448 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 220 Output Capacitance 75 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit 7 ns Rise Time tr td(off) See specified Test Circuit 8 ns See specified Test Circuit 28 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit 16 ns VDS=10V, VGS=10V, ID=2.5A 8.6 nC 1.3 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.5A VDS=10V, VGS=10V, ID=2.5A Diode Forward Voltage VSD IS=2.5A, VGS=0 1.8 nC 0.83 1.2 V Switching Time Test Circuit VDD=30V 10V 0V VIN ID=1.5A RL=20Ω VIN D VOUT PW=10µs D.C.≤1% G P.G 50Ω 2SK3448 S ID -- VDS 6.0V VDS=10V 3.0 4.0V 3.5 V Drain Current, ID -- A V 2.5 5 V 3.0 10.0 2.0 1.5 VGS=2.5V 1.0 4 3 2 C 25° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.5A 150 100 50 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT01247 1.5 2.0 2.5 3.0 3.5 IT01246 RDS(on) -- Ta 300 200 0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C ID=1.0A 0.5 IT01245 RDS(on) -- VGS 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta = 1 0.5 0 75 °C Drain Current, ID -- A 8.0V ID -- VGS 6 5.0V --25 °C 3.5 250 200 4V S= VG 0A, 1. I D= 150 ,V 1.5A V =10 GS I D= 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT01248 No.6785-2/4 2SK3448 C 5° 1.0 7 5 = Ta --2 °C 25 C 5° 7 3 2 0.1 7 5 0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V SW Time -- ID VDD=30V VGS=10V 1.2 IT01250 Ciss, Coss, Crss -- VDS 1000 f=1MHz 7 5 7 5 td(off) 3 tf 2 10 td(on) 7 5 100 Coss 7 5 Crss 10 2 0.1 3 5 7 2 1.0 3 5 Drain Current, ID -- A 9 Ciss 2 2 7 10 3 3 tr 3 1.0 7 0 10 VGS -- Qg 7 6 5 4 3 10 7 5 3 2 1 3 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT01253 PD -- Ta 1.2 50 60 IT01252 <10µs 10 1m0µs s 10 10 ms 0m s ID=2.5A Operation in this area is limited by RDS(on). 3 2 2 2 40 IDP=10A 1.0 7 5 0.1 7 5 0 30 ASO 3 2 8 1 20 Drain-to-Source Voltage, VDS -- V VDS=10V ID=2.5A 0 10 IT01251 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 0.1 7 5 IT01249 2 Allowable Power Dissipation, PD -- W 3 2 0.01 0.2 5 7 10 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 100 1.0 7 5 3 2 3 2 2 3 2 C 25°C 2 VGS=0 Ta=7 5° 3 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 7 5 IF -- VSD 10 7 5 VDS=10V --25°C yfs -- ID 10 DC op era tio n Ta=25°C Single pulse 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT02522 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT02523 No.6785-3/4 2SK3448 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS No.6785-4/4