Ordering number : ENN7518 50C02SP NPN Epitaxial Planar Silicon Transistor 50C02SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. unit : mm 2033A [50C02SP] Features • • 3.0 Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 1.8 0.4 0.5 15.0 • 0.6 • 2.2 4.0 0.4 0.4 3 0.7 Specifications 1 : Emitter 2 : Collector 3 : Base 3.0 3.8nom Absolute Maximum Ratings at Ta=25°C Parameter 1.3 0.7 1 2 1.3 Symbol SANYO : SPA Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 5 Collector Current Collector Current (Pulse) Collector Dissipation V IC 500 ICP PC 1.0 A 400 mW 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg mA Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Conditions Ratings min typ max Unit VCB=40V, IE=0 100 nA VEB=4V, IC=0 100 nA VCE=2V, IC=10mA 300 VCE=10V, IC=50mA 800 500 Marking : YN MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52703 TS IM TA-100121 No.7518-1/4 50C02SP Continued from preceding page. Parameter Symbol Output Capacitance Ratings Conditions Cob min typ Unit max VCB=10V, f=1MHz 2.8 VCE(sat) IC=100mA, IB=10mA 50 100 VBE(sat) V(BR)CBO IC=100mA, IB=10mA IC=10µA, IE=0 0.9 1.2 Collector-to-Base Breakdown Voltage 60 Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Turn-ON Time ton tstg tf Storage Time Fall Time pF mV V V See specified Test Circuit. 30 See specified Test Circuit. 340 ns ns See specified Test Circuit. 55 ns Switching Time Test Circuit IB1 PW=20µs D.C.≤1% OUTPUT IB2 INPUT RB VR RL 50Ω + 220µF + 470µF VBE= --5V VCC=25V IC=20IB1= --20IB2=200mA IC -- VCE 250 1mA 600µA 200 150 200µA 100 400 300 200 --25°C 2mA °C 25°C A 1 5m 3mA Ta=7 5 300 500 Collector Current, IC -- mA 350 8mA A VCE=2V 5mA 10m 20m 400 7mA 30mA Collector Current, IC -- mA 450 IC -- VBE 600 A 500 100 50 IB=0 400 500 600 700 900 800 Collector-to-Emitter Voltage, VCE -- mV 0 0.6 0.8 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 100 7 5 3 2 1.2 IT05107 VCE(sat) -- IC IC / IB=10 VCE=2V 25°C --25°C 5 0.4 Base-to-Emitter Voltage, VBE -- V 3 Ta=75°C 7 0.2 IT05106 hFE -- IC 1000 DC Current Gain, hFE 0 1000 2 100 7 75 °C 300 5 Ta = 200 °C 3 25 5° C 100 --2 0 0 2 10 7 10 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05108 5 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05411 No.7518-2/4 50C02SP VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Ta =7 5° C °C 100 7 °C 5 25 3 2 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 2 100 °C 25 7 5 °C 75 = Ta C 5° --2 3 2 2 3 5 7 10 2 3 5 7 100 2 IT05110 Cob -- VCB 10 IC / IB=20 5 3 2 25°C 1.0 Ta= --25°C 7 75°C 5 3 5 7 1000 3 Collector Current, IC -- mA f=1MHz Output Capacitance, Cob -- pF Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 IT05109 7 7 5 3 2 2 0.1 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 1.0 1.0 5 7 1000 2 3 5 7 100 7 5 VCE=10V 7 ON Resistance, Ron -- Ω 3 2 3 5 7 100 IT05112 Ron -- IB 1kΩ f=1MHz OUT IN 1kΩ 3 5 2 10 Collector-to-Base Voltage, VCB -- V IT05111 fT -- IC 1000 Gain-Bandwidth Product, fT -- MHz 5 10 1.0 5 7 1000 VBE(sat) -- IC 10 2 IB 10 7 5 3 2 1.0 7 5 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 2 Collector Current, IC -- mA 3 5 7 1000 IT05113 PC -- Ta 500 Collector Dissipation, PC -- mW IC / IB=50 7 2 10 1.0 VCE(sat) -- IC 1000 IC / IB=20 --2 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 0.1 0.1 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06092 400 300 200 100 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05117 No.7518-3/4 50C02SP Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2003. Specifications and information herein are subject to change without notice. PS No.7518-4/4