Ordering number:ENN6257 PNP Epitaxial Planar Silicon Transistor CPH5501 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, motor drivers, strobes. unit:mm 2162 Features [CPH5501] 0.15 0.2 4 3 2.8 0.05 0.6 1.6 0.6 5 1 2 0.95 0.4 0.9 0.7 0.2 · Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. · The CPH5501 consists of two chips which are equivalent to the 2SA1338 and the CPH3105, respectively. · Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). 2.9 0.4 Specifications 1 : Collector (TR1) 2 : Collector (TR2) 3 : Base (TR2) 4 : Emitter Common 5 : Base (TR1) SANYO : CPH5 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR1] Collector-to-Base Voltage VCBO –60 V Collector-to-Emitter Voltage VCEO VEBO –50 V IC –500 mA Collector Current (Pulse) ICP –800 mA Collector Dissipation PC 0.2 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage Collector Current –5 V [TR2] Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO VEBO –50 V –6 V IC –3 A ICP –6 Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg –600 Mounted on a ceramic board (600mm2×0.8mm) A mA 0.9 W 150 ˚C –55 to +150 ˚C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13100TS (KOTO) TA-2356 No.6257–1/6 CPH5501 Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ max Unit [TR1] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=–40V, IE=0 VEB=–4V, IC=0 DC Current Gain Gain-Bandwidth Product hFE fT VCE=–5V, IC=–10mA VCE=–10V, IC=–50mA Output Capacitance Cob VCB=–10V, f=1MHz VCE(sat) Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage 100 Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage µA 560 MHz 5.6 IC=–100mA, IB=–10mA IC=–100mA, IB=–10mA Turn-ON Time V(BR)EBO ton IE=–10µA, IC=0 See specified Test Circuit. Storage Time tstg tf Fall Time µA –0.1 200 VBE(sat) V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–100µA, RBE=∞ Collector-to-Base Breakdown Voltage –0.1 pF 0.15 0.4 V 0.8 1.2 V –60 V –50 V –5 V 70 ns See specified Test Circuit. 400 ns See specified Test Circuit. 50 ns [TR2] Collector Cutoff Current ICBO VCB=–40V, IE=0 –1 µA Emitter Cutoff Current IEBO –1 µA DC Current Gain hFE1 hFE2 VEB=–4V, IC=0 VCE=–2V, IC=–100mA Gain-Bandwidth Product fT Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage VCE=–2V, IC=–3A VCE=–10V, IC=–500mA 560 40 360 MHz Cob VCB=–10V, f=1MHz 24 VCE(sat)1 IC=–1A, IB=–50mA IC=–2A, IB=–100mA –100 –200 mV –185 –500 mV IC=–2A, IB=–100mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO IE=–10µA, IC=0 –0.88 –1.2 V VCE(sat)2 VBE(sat) Base-to-Emitter Saturation Voltage 200 Turn-ON Time Storage Time Fall Time pF –60 V –50 V –6 V ton tstg See specified Test Circuit. 30 ns See specified Test Circuit. 230 ns tf See specified Test Circuit. 15 ns Electrical Connection B1 EC B2 Tr1 Tr2 C1 C2 Switching Time Test Circuit [TR1] [TR2] IB1 PW=10µs D.C.≤1% IB2 OUTPUT INPUT IB1 PW=20µs D.C.≤1% IB2 OUTPUT INPUT RB + 50Ω RB RL VR + 50Ω 100µF 5V 470µF VCC=–20V –10IB1=10IB2=IC=–100mA RL VR10 + 100µF + 470µF 5V –25V –10IB1=10IB2=IC=–1A No.6257–2/6 CPH5501 IC -- VCE Collector Current, IC – mA IC -- VCE --20 -60µA A 0µ -400µA -300µA -50 -7 0 --90 [TR1] --80 -600µA --70 --60 -200µA --50 --40 -100µA --30 --20 --10 [TR1] A -40µ A -50µ --18 Collector Current, IC – mA 0µ A --100 --16 -30µ A --14 --12 -20µA --10 --8 -10µA --6 --4 --2 0 0 IB=0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Collector-to-Emitter Voltage, VCE – V IC -- VBE --120 IB=0 0 --1.0 0 --5 --10 --15 --20 --25 --30 --35 Collector-to-Emitter Voltage, VCE – V IT00010 [TR1] hFE -- IC 2 [TR1] VCE=-5V DC Current Gain, hFE 7 --80 --60 5°C --40 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 -25 °C --0.7 --0.8 --0.9 Base-to-Emitter Voltage, VBE – V 25°C 2 -25°C 100 7 2 --1.0 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 IT00015 Collector Current, IC – mA IT00013 VCE(sat) -- IC --10 3 3 0 0 Ta=75°C 5 5 C Ta= 7 --20 25 ° Collector Current, IC – mA VCE=-5V 1000 --100 [TR1] VBE(sat) -- IC --10 [TR1] IC / IB=10 IC / IB=10 5 7 Base-to-Emitter Saturation Voltage, VBE(sat) – V Collector-to-Emitter Saturation Voltage, VCE(sat) – V --40 IT00011 3 2 --1.0 5 3 2 --0.1 5 3 5 3 2 --1.0 7 5 2 --0.01 3 5 --1.0 2 3 5 2 --10 3 5 --100 2 Collector Current, IC – mA 3 Cob -- VCB 3 5 5 --1000 IT00020 [TR1] 7 5 3 2 --1.0 3 5 7 --10 2 Collector-to-Base Voltage, VCB – V 3 5 2 --10 3 5 2 --100 5 IT00018 3 f T -- IC 1000 Gain-Bandwidth Product, f T – MHz Output Capacitance, Cob – pF --10 2 3 5 --1000 IT00023 [TR1] VCE=-10V 7 2 --1.0 2 Collector Current, IC – mA f=1MHz 7 --0.1 5 3 2 100 7 5 3 2 10 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC – mA 2 3 5 7 --1000 IT00017 No.6257–3/6 CPH5501 SW Time -- IC ASO [TR1] 1.0 7 5 3 ICP IC 5 tstg 7 1m s 10 ms 10 0m s 3 2 --100 2 0.1 tr 7 tf 5 3 2 td DC 7 5 3 3 5 7 2 --100 3 Collector Current, IC – mA --10 7 5 7 Ta=25°C 3 5 7 --1.0 2 3 [TR1] on a 0.1 cer am ic b oar d( 60 0m m Collector Current, IC – A Collector Dissipation, PC – W Mo un ted 2 ×0 .8m m) 20 40 60 80 100 120 140 IT01304 IC -- VBE [TR2] 5 7 --100 IT00026 [TR2] mA mA -40 mA -30 -20 A -10m --1.4 -8mA --1.2 -6mA --1.0 -4mA --0.8 --0.6 -2mA --0.4 IB=0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 hFE -- IC 1000 IT00012 [TR2] VCE=-2V 7 5 --1.0 Ta=75°C 3 DC Current Gain, hFE 2 --0.8 --0.6 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 -25°C --0.7 --0.8 --0.9 IT00014 VCE(sat) -- IC [TR2] 3 2 --1.0 7 5 3 2 25° C 5 Ta=7 3 2 --0.01 --0.01 2 3 °C -25 °C 5 7 --0.1 10 7 5 2 3 3 5 7 --1.0 Collector Current, IC – A 2 3 5 7 --10 IT00021 2 3 5 7 --1.0 2 3 VCE(sat) -- IC --10 7 5 5 7 --10 IT00016 [TR2] IC / IB=50 3 2 --1.0 7 5 3 2 25° C --0.1 7 5 C Ta=75° 3 2 2 5 7 --0.1 Collector Current, IC – A IC / IB=20 --0.1 7 5 3 2 1.0 --0.01 --1.0 Base-to-Emitter Voltage, VBE – V --10 7 5 -25°C 25°C 100 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) – V 0 0 25° --0.2 C C --0.4 Ta=7 5° Collector Current, IC – mA 3 Collector-to-Emitter Voltage, VCE – mV VCE=--2V Collector-to-Emitter Saturation Voltage, VCE(sat) – V 2 --1.6 0 0 160 Ambient Temperature,Ta – °C --1.2 --10 --0.2 0 0 7 IC -- VCE --2.0 --1.8 0.2 5 Collector-to-Emitter Voltage, VCE – V IT00025 PC -- Ta 0.3 era tio n 2 3 2 --10 op 5 0.01 7 [TR1] --1000 VCC=20V IC=10IB1=-10IB2 Collector Current, IC – mA Switching Time, SW Time – µs 2 --0.01 --0.01 2 3 C -25° 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 7 --10 IT00022 No.6257–4/6 CPH5501 VBE(sat) -- IC --10 [TR2] 5 3 2 --1.0 Ta=-25°C 7 75°C 5 25°C 2 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 [TR2] Collector Current, IC – A 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB – V PC -- Ta 1.4 7 --100 IT00019 5 7 --1.0 2 3 ASO 1m s 10 0m DC s op era tio n --1.0 7 5 3 2 --0.1 7 5 5 7 --10 IT00017 [TR2] ICP IC 2 3 2 3 3 50 0µ s s 0µ 3 2 10 --10 7 5 5 5 7 --0.1 2 7 2 3 Collector Current, IC – A f=1MHz 10 --1.0 2 IT00024 Cob -- VCB 100 2 5 7 --0.01 5 7 --10 Collector Current, IC – A Output Capacitance, Cob – pF 3 3 --0.1 --0.01 Collector Dissipation, PC – W [TR2] VCE=-10V 7 5 DC Current Gain, hFE Base-to-Emitter Saturation Voltage, VBE(sat) – V 7 f T -- IC 1000 IC / IB=50 10 ms Ta=25°C Single pulse Mounted on a ceramic board(600mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE – V 5 7 --100 IT00027 [TR2] 1.2 1.0 Mo un ted 0.8 0.6 0.4 on a cer am ic b oar d( 60 0m m 2 ×0 .8m m) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature,Ta – °C 140 160 IT00028 No.6257–5/6 CPH5501 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6257–6/6