February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. -2.7 A, -30 V. RDS(ON) = 0.07Ω @ VGS = -10 V RDS(ON) = 0.115 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter NDH8504P Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1) -2.7 A PD Maximum Power Dissipation (Note 1) 0.8 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C - Pulsed -8 THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W © 1997 Fairchild Semiconductor Corporation NDH8504P Rev.C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -30 Typ Max Units -1 µA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0 V V -10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA V TJ= 55°C ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = - 250 µA TJ= 125°C RDS(ON) Static Drain-Source On-Resistance -1 -1.6 -3 -0.8 -1.2 -2.4 VGS = -10 V, ID = -2.7 A TJ= 125°C VGS = -4.5 V, ID = -2.1 A ID(on) On-State Drain Current gFS Forward Transconductance VGS = -10 V, VDS = -5 V -8 VGS = -4.5 V, VDS = -5 V -3 VDS = -10 V, ID = -2.7 A 0.062 0.07 0.088 0.125 0.102 0.115 Ω A 5.5 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz 560 pF 340 pF 130 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time 13 25 ns 16 30 ns tD(off) tf Turn - Off Delay Time 35 70 ns Turn - Off Fall Time 40 80 ns 19 27 nC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω VDS = -10 V, ID = -2.7 A, VGS = -10 V 3.8 nC 4.7 nC NDH8504P Rev.C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units -0.67 A -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A (Note 2) -0.74 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD (t ) = T J−T A R θJ A(t ) = T J−T A R θJ C+R θCA(t ) = I 2D (t ) × RDS(ON)@TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDH8504P Rev.C Typical Electrical Characteristics 3 -10 R DS(on), NORMALIZED -4.0 -8 -3.5 -6 -4 -3.0 I D -2 0 DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE CURRENT (A) VGS = -10V -6.0 -5.0 -4.5 2.5 VGS = -3.5V 2 -4.0 -4.5 -5.0 1.5 -6.0 -7.0 -10 1 0.5 0 -0.5 -1 -1.5 -2 -2.5 0 -3 -2 I V DS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -10V -10 1.2 1 0.8 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 V GS = -10V 1.6 1.2 25°C 1 -55°C 0.8 0.6 0.4 150 TJ = 125°C 1.4 0 -2 -4 -6 I D , DRAIN CURRENT (A) J Figure 3. On-Resistance Variation with Temperature. -8 -10 Figure 4. On-Resistance Variation with Drain Current and Temperature. -10 T J = -55°C -8 25°C V GS(th), NORMALIZED 125°C -6 -4 -2 GATE-SOURCE THRESHOLD VOLTAGE 1.2 V DS = -10V I D , DRAIN CURRENT (A) -8 1.8 I D = -2.7A 0.6 -50 -4 -6 , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 1.4 D VDS = V G S 1.1 1 0.9 0.8 0.7 0.6 -50 0 -1 -2 -3 -4 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. -5 I D = -250µA -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 150 J Figure 6. Gate Threshold Variation with Temperature. NDH8504P Rev.C Typical Electrical Characteristics 10 3 I D = -250µA -I , REVERSE DRAIN CURRENT (A) 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 VGS = 0V 1 0.5 T J = 125°C 25°C 0.1 -55°C 0.01 0.001 S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1.08 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 0.0001 0.2 0.4 -V SD 0.6 0.8 1 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 7. Breakdown Voltage Variation with Temperature. 1500 10 V I 600 Ciss 400 Coss -V GS , GATE-SOURCE VOLTAGE (V) CAPACITANCE (pF) 1000 200 Crss 100 f = 1 MHz V GS = 0 V 50 0 .1 0 .2 -V 0 .5 1 2 5 10 , DRAIN TO SOURCE VOLTAGE (V) DS 20 D =-5V -10V -15V 6 4 2 0 4 8 12 Q g , GATE CHARGE (nC) 16 20 Figure 10. Gate Charge Characteristics. ton t d(on) RL t off tr t d(off) tf 90% 90% V OUT D R GEN DS 8 -VDD V IN = -2.7A 0 30 Figure 9. Capacitance Characteristics. VGS 1.2 , BODY DIODE FORWARD VOLTAGE (V) VOUT 10% DUT G 10% 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. INVERTED Figure 12. Switching Waveforms. NDH8504P Rev.C 12 15 10 V DS = -10V TJ = -55°C 5 RD 9 -I , DRAIN CURRENT (A) 25°C 125°C 6 3 S(O N) LIM 0 -3 -6 -9 -12 -15 1m 10 10 1 0.5 0.01 0.1 s SINGLE PULSE R θJ A = See Note 1 TA = 25°C 0.2 0.5 - V ID , DRAIN CURRENT (A) DS Figure 13. Transconductance Variation with Drain Current and Temperature. ms 10 s DC V GS = -10V 0.1 0.05 0m s 1s A 0 IT 2 D gFS , TRANSCONDUCTANCE (SIEMENS) Typical Electrical and Thermal Characteristics 1 2 5 10 , DRAIN-SOURCE VOLTAGE (V) 20 30 Figure 14. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.1 R θJA (t) = r(t) * R θJA R JA = See Note 1 θ 0.2 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 0.001 0.0001 0.001 t2 TJ - T = P * R (t) A θJA Duty Cycle, D = t 1 / t 2 Single Pulse 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note1 .Transient thermal response will change depending on the circuit board design. NDH8504P Rev.C SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. Static Dissi pat ive Emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no f l ow c ode ) TNR D84Z SSOT-8 Unit Orientation TNR 3,000 500 13" D ia 7" Dia 343x64x343 184x187x47 Max qty per Box 6,000 1,000 Weight per unit (gm) 0.0416 0.0416 Weight per Reel (kg) 0.5615 0.0980 343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons Note/Comments F63TNR Label F63TNR Label F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0 LOT: CBVK741B019 QTY: 3000 FSID: FDR835N SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets August 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-8 (12mm) 4.47 +/-0.10 5.00 +/-0.10 W 12.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.50 +/-0.10 1.75 +/-0.10 F 10.25 mi n 5.50 +/-0.05 P1 P0 8.0 +/-0.1 4.0 +/-0.1 K0 T Wc 1.37 +/-0.10 0.280 +/-0.150 9.5 +/-0.025 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Si de or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-8 Reel Configuration: Figur e 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 12mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOT-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.