Ordering number : EN1877C Silicon Planar Type DTC8-N 8A Bidirectional Thyristor Features • Peak OFF-state voltage : 200 to 600V • RMS ON-state current : 8A • TO-220 package. Absolute Maximum Ratings at Ta=25°C Repetitive Peak OFF-StateVoltage RMS ON-State Current VDRM IT(RMS) Surge ON-State Current Amperes Squared-Seconds Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Junction Temperature Strage Temperature Weght ITSM ∫ i2T·dt PGM PG(AV) IGM VGM Tj Tstg Tc=105°C, single-phase full-wave Peak 1 cycle, 50Hz 1ms≤t≤10ms f≥50Hz, duty≤10% f≥50Hz, duty≤10% f≥50Hz, duty≤10% T2 + + – – → → → → → → → → → 80 → 32 → 5 → 0.5 → ±2 → ±10 → 125 → –40 to +125 → 1.8 A A2s W W A V °C °C g typ A Tj=125°C, VD=VDRM max 2 unit mA VTM dv/dt ITM=12A 1.5 Tj=125°C, VD=200V (C), 10 400V (E to G) RL=100Ω 50 VD=12V, RL=20Ω 30 VD=12V, RL=20Ω 30 VD=12V, RL=20Ω 50 VD=12V, RL=20Ω 30 VD=12V, RL=20Ω 2 VD=12V, RL=20Ω 2 VD=12V, RL=20Ω 2 VD=12V, RL=20Ω 2 Tc=125°C, VD=VDRM 0.2 Between junction and case, AC 2 Package Dimensions 1155A (unit : mm) V V/µs IH IGT IGT IGT IGT VGT VGT VGT VGT VGD Rth(j-c) T1 – – + + min 8 IDRM * : The gate trigger mode is shown below. Trigger mode I II III IV DTC8G-N unit 600 V → → Electrical Characteristics at Ta=25°C Repetitive Peak OFF-State Current Peak ON-State Voltage Critical Rate of Rise of OFF-State Voltage Holding Current Gate Trigger Current* (I) (II) (III) (IV) Gate Trigger Voltage* (I) (II) (III) (IV) Gate Nontrigger Voltage Thermal Resistance DTC8C-N DTC8E-N 200 400 mA mA mA mA mA V V V V V °C/W G + – + – SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN O0797GI/3109MO, TS No.1877-1/3 Gate Trigger Current, IGT – mA Maximum Allowable Case Temperature, Tc max – °C Maximum Allowable Ambient Temperature, Ta max – °C Average ON-State Power Dissipation, PT(AV) – W Gate Voltage, VG – V Gate Voltage, VG – V Surge ON-State Current, ITSM – A ON-State Current, IT – A DTC8-N ON-State Voltage, VT – V RMS ON-State Current, IT(RMS) – A Number of Cycles at 50Hz, n Cate Current, IG – A Cate Current, IG – A RMS ON-State Current, IT(RMS) – A RMS ON-State Current, IT(RMS) – A Case Temperature, Tc – °C No.1877-2/3 Holding Current, IH – mA Gate Trigger Current, IGT – V DTC8-N Case Temperature, Tc – °C IGT(tw) / IGT – % Transient Thermal Impedance, Rth(j-c) – °C/W Case Temperature, Tc – °C Time, t – ms Gate Trigger Pulse Width, tw – µs No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property lose. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 1997. Specifications and information herein are subject to change without notice. No.1877-3/3