Ordering number:EN4653 FC152 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Differential Amp Applications Features Package Dimensions · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC152 is formed with two chips, being equivalent to the 2SC4270, placed in one package. · Excellent in thermal equilibrium, pair capability and especially suited for differerntial amp. unit:mm 2104A [FC152] 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO VEBO 15 V 3 V Collector Current IC 50 mA Collector Dissipation PC PT 200 mW Total Dissipation 300 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage 1 unit Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditons Ratings min typ max Unit Collector Cutoff Current ICBO VCB=20V, IE=0 0.1 µA Emitter Cutoff Current IEBO 10 µA DC Current Gain hFE VEB=2V, IC=0 VCE=10V, IC=5mA DC Current Gain Ratio B-E Voltage Difference Gain-Bnadwidth Product Output Capacitance 60 hFE(small/ VCE=10V, IC=5mA large) VBE(large- VCE=10V, IC=0 small) fT VCE=10V, IC=10mA Cob VCB=10V, f=1MHz 0.7 200 0.95 3.0 1.5 10 3.0 0.7 mV GHz 1.0 pF Power Gain PG VCE=10V, IC=10mA, f=0.9GHz 12 dB Noise Figure NF VCE=10V, IC=3mA, f=0.9GHz 3.0 dB Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large) and VBE(large-small) are for pair capability Marking:152 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41594TH (KOTO) X-7851 No.4653-1/4 FC152 No.4653-2/4 FC152 No.4653-3/4 FC152 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4653-4/4