Ordering number:EN4926 FP304 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions · Complex type with an NPN transistor and a Schottoky barrier diode facilitating high-density mounting. · The FP304 is composed of 2 chips, one being equivalent to the 2SD1620 and the other the SB0703C, placed in one package. unit:mm 2099A [FP304] 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO 30 V 10 V VEBO IC 6 V 3 A ICP 5 500 A Base Current IB Collector Dissipation PC 0.8 W Junction Temperature Tj 150 ˚C VRRM VRSM 30 V 35 V IO 700 mA Mounted on ceramic board (250mm2×0.8mm) mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg Electrical Connection 50Hz sine wave, 1 cycle 5 A –55 to +125 ˚C –55 to +125 ˚C Continued on next page. 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41095TS (KOTO) BX-1457 No.4926-1/4 FP304 Continued from preceding page. Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 Gain-Bandwidth Product hFE2 fT Output Capacitance Cob C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage VCE(sat) VBE(sat) VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=3A µA 0.1 µA 200 140 VCE=10V, IC=50mA 200 VCB=10V, f=1MHz IC=3A, IB=60mA IC=3A, IB=60mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO IE=10µA, IC=0 0.1 MHz 30 pF 0.3 0.4 V 0.95 1.35 V 30 V 10 V 6 V [SBD] Reverse Voltage VR VF IR=300µA IF=700mA VR=15V Interterminal Capacitance IR C Reverse Recovery Time trr Forward Voltage Reverse Current Thermal Resistance Rthj-a VR=10V, f=1MHz IF=IR=100mA, See sepcified Test Circuit. Mounted on ceramic board (250mm2×0.8mm) 30 V 0.55 V 80 µA 28 pF 10 170 ns ˚C/W Marking:304 No.4926-2/4 FP304 No.4926-3/4 FP304 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4926-4/4