Ordering number : ENN6593 FTD1011 P-Channel Silicon MOSFET FTD1011 Ultrahigh-Speed Switching Applications • • • • Package Dimensions Low ON-resistance. 2.5V drive. Mount height of 1.1mm. Composite type, facilitating high-density mounting. unit : mm 2155A [FTD1011] 3.0 0.65 0.425 5 4.5 6.4 0.5 8 0.95 Features 4 0.125 1.0 0.25 (0.95) 1 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 0.1 Specifications SANYO : TSSOP8 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V --3 A Drain Current (DC) ID Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% --15 A Mounted on a ceramic board (1000mm2✕0.8mm)1unit 0.8 W PT Tch Mounted on a ceramic board (1000mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourse on-State Resistance V(BR)DSS Conditions Ratings min typ ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGS=±8V, VDS=0 --20 VGS(off) yfs VDS=--10V, ID=--1mA VDS=--10V, ID=--3A --0.4 RDS(on)1 RDS(on)2 ID=--3A, VGS=--4V ID=--2A, VGS=--2.5V IDSS IGSS 6 Marking : D1011 Unit max V --1 µA ±10 µA --1.4 V 8.8 S 50 65 mΩ 68 96 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71400 TS IM TA-2725 No.6593-1/4 FTD1011 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 1000 Output Capacitance 190 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 120 pF Turn-ON Delay Time td(on) See specified Test Circuit 13 ns Rise Time tr td(off) See specified Test Circuit 110 ns See specified Test Circuit 65 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit 75 ns VDS=--10V, VGS=--10V, ID=--3A 23 nC 1.6 nC Gate-to-Source Charge Qgs Gate-to-Drain ”Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A VDS=--10V, VGS=--10V, ID=--3A Diode Forward Voltage VSD IS=--3A, VGS=0 Switching Time Test Circuit 2.5 nC --0.8 --1.5 V Electrical Connection VDD= --10V D2 S2 S2 G2 D1 S1 S1 G1 VIN 0V --4V ID= --3A RL=3.3Ω VIN D VOUT PW=10µs D.C.≤1% G P.G 50Ω S ID -- VDS °C --2 75 --1 Ta = --1 --25 °C --2 --3 °C VGS= --1.5V --3 --4 25 --2 . Drain Current, ID -- A --4 VDS=10V --5 --4.0 Drain Current, ID -- A --5 ID -- VGS --6 0V V --3.0V --2.5V --6 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 ID= --2A --3A 80 60 40 20 0 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V --10 IT02300 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT02299 RDS(on) -- Ta 160 Ta=25°C 140 --0.4 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 160 --0.2 IT02298 140 120 100 --2.5V S= VG , A --2 V I D= = --4.0 , V GS A 3 -I D= 80 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02301 No.6593-2/4 FTD1011 C 5° 1.0 = Ta 7 °C 75 --2 5 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A --0.001 --0.2 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 7 5 3 Coss Crss 100 5 --0.9 --1.0 IT02303 VGS -- Qg --8 --7 --6 --5 --4 --3 --2 0 0 --2 --4 --6 --8 --10 --12 --14 --18 --16 Drain-to-Source Voltage, VDS -- V 0 --20 Drain Current, ID -- A 2 td(off) 7 tf 5 3 tr 2 td(on) 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 To t al 0.6 1u nit 0.4 di ss ip ati on 0.2 Mounted on a ceramic board(1000mm2✕0.8mm) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02308 14 16 18 20 22 24 IT02305 <10µs 1 10 ms ms 10 0m --1.0 7 5 s op era tio n 3 2 Operation in this area is limited by RDS(on) --0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(1000mm2✕0.8mm)1unit 2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD(FET1) -- W 0.8 12 DC IT02306 1.0 10 ID= --3A 3 2 --0.01 --0.01 PD -- Ta 1.2 8 IDP= --15A 3 2 10 7 --0.1 6 ASO 3 2 --10 7 5 100 4 Total Gate Charge, Qg -- nC VDD= --10V VGS= --4V 3 2 IT02304 SW Time -- ID 5 Switching Time, SW Time -- ns --0.8 --1 7 Allowable Power Dissipation, PD -- W --0.7 VDS= --10V ID= --3A --9 Ciss --0.6 --0.5 --10 2 2 --0.4 Diode Forward Voltage, VSD -- V f=1MHz 1000 --0.3 IT02302 Ciss, Coss, Crss -- VDS 3 Ta= 75 --0.01 7 5 3 2 3 C 25 2 --1.0 7 5 3 2 --2 5° °C C 5 VGS=0 °C 7 Foward Current, IF -- A Forward Transfer Admittance, yfs -- S 10 3 IF -- VSD --10 7 5 3 2 VDS=10V 25° yfs -- ID 2 2 3 IT02307 PD(FET1) -- PD(FET2) 1.0 M ou nte 0.8 do na ce ram 0.6 ic bo ard (1 00 0m 0.4 m2 ✕0 .8m m) 0.2 0 0 0.2 0.4 0.6 0.8 1.0 Allowable Power Dissipation, PD(FET2) -- W IT02309 No.6593-3/4 FTD1011 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.6593-4/4