Ordering number : ENN6784 FW133 P-Channel Silicon MOSFET FW133 Load Switching Applications Features • • Package Dimensions 4V drive. Low ON-resistance. unit : mm 2129 [FW133] 5 1 4 6.0 4.4 0.3 8 1.8max 0.2 0.595 1.27 0.43 0.1 1.5 5.0 Specifications 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V --7 A Drain Current (DC) ID Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% --32 A Mounted on a ceramic board (1000mm2✕0.8mm) 1unit 1.7 W PT Tch Mounted on a ceramic board (1000mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 2.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs Conditions Ratings min typ ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=±16V, VDS=0 --30 VDS=--10V, ID=--1mA VDS=--10V, ID=--7A --1.0 8.4 Marking : W133 max Unit V --1 µA ±10 µA --2.4 V 12 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1500 TS IM TA-2298 No.6784-1/4 FW133 Continued from preceding page. Ratings Parameter Symbol RDS(on)1 RDS(on)2 ID=--7A, VGS=--10V ID=--4A, VGS=--4.5V 24 32 Static Drain-to-Source On-State Resistance 36 51 mΩ ID=--4A, VGS=--4V VDS=--10V, f=1MHz 40 56 mΩ Input Capacitance RDS(on)3 Ciss 1700 pF Output Capacitance Coss VDS=--10V, f=1MHz 380 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 240 pF Turn-ON Delay Time td(on) See specified Test Circuit 15 ns Rise Time tr td(off) See specified Test Circuit 150 ns See specified Test Circuit 85 ns tf See specified Test Circuit 90 ns Qg VDS=--10V, VGS=--10V, ID=--7A 32 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--10V, ID=--7A VDS=--10V, VGS=--10V, ID=--7A 4.5 Gate-to-Drain “Miller” Charge 5 nC Diode Forward Voltage VSD IS=--7A, VGS=0 Turn-OFF Delay Time Fall Time Total Gate Charge Conditions min typ Unit max --1.0 mΩ --1.5 V Switching Time Test Circuit VDD= --15V VIN 0V --10V ID= --7A RL=2.1Ω VIN D VOUT PW=10µs D.C.≤1% G P.G FW133 50Ω S ID -- VDS VDS= --10V --10 --4 C --2 C VGS= --2.5V --6 25° --4 --8 5°C 0V . --3 --6 Ta= 7 Drain Current, ID -- A --2 --25 ° Drain Current, ID -- A --8 ID -- VGS --12 --10. 0V --6.0 --4. V 5V --4. 0V --10 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT02582 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V --3.0 --3.5 IT02583 No.6784-2/4 FW133 RDS(on) -- VGS 80 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 20 10 --2 --4 --6 --8 --10 --12 --14 --16 --18 Gate-to-Source Voltage, VGS -- V 5 ° 25 C = Ta -- °C 25 °C 75 1.0 7 5 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 2 3 IT02586 Gate-to-Source Voltage, VGS -- V 1000 7 5 Coss 3 Crss 2 100 120 140 160 IT02585 VGS=0 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.3 --0.4 --0.5 --0.7 --0.6 --0.8 --0.9 --1.0 IT02587 VGS -- Qg --10 Ciss 80 --10 7 5 3 2 VDS= --10V ID= --7A --9 2 60 Diode Forward Voltage, VSD -- V f=1MHz 3 40 IF -- VSD --0.001 --0.2 Ciss, Coss, Crss -- VDS 5 20 0 --0.01 7 5 3 2 3 0.1 --0.01 Ciss, Coss, Crss -- pF --20 3 2 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 7 2 --40 Ambient Temperature, Ta -- °C 10 3 10 0 --60 --20 VDS= --10V 2 20 IT02584 yfs -- ID 3 30 5°C 0 --0 .5V = --4 VGS , A 4 V -I D= = --10.0 A, V GS I D= --7 40 C 30 I D= , VG --4A --25 ° ID= --4A --7A 40 .0V --4 S= 50 C 50 60 25° 60 70 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 --8 --7 --6 --5 --4 --3 --2 --1 0 100 --5 0 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 Drain Current, ID -- A td(off) 100 7 5 tf tr 3 2 td(on) 10 7 5 3 2 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 --10 5 10 2 3 IT02590 15 20 25 30 Total Gate Charge, Qg -- nC VDD= --15V VGS= --10V 3 2 1.0 --0.1 0 IT02588 SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns --30 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 35 IT02589 ASO <10µs 1m 10 0µ s s 10 ms IDP= --32A ID= --7A DC 10 0m s op era tio n( Operation in this area is limited by RDS(on). Ta = 25 °C ) Ta=25°C Single pulse 1unit 2 Mounted on a ceramic board(1000mm ✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT02591 No.6784-3/4 FW133 PD -- Ta Allowable Power Dissipation, PD -- W 2.5 2.0 1.7 1.5 To ta l 1u nit 1.0 0.5 0 Mounted on a ceramic board(1000mm2✕0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02592 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS No.6784-4/4