Ordering number:EN5908 P-Channel Silicon MOSFET FW213 DC-DC Converter Applications Features Package Dimensions · Low ON resistance. · 4V drive. unit:mm 2129 [FW213] 5 4 Specifications 0.595 1.27 0.43 0.1 1.5 5.0 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 0.2 1.8max 1 6.0 4.4 0.3 8 SANYO:SOP8 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol Conditions Ratings Unit VDSS VGSS Drain Current (DC) 30 V ±20 V 7 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 52 A Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1unit 1.7 W Total Dissipation PD PT 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 Cutoff Voltage RDS(on)2 Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance Conditions ID=1mA, VGS=0 Ratings min typ max 30 V VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=5A, VGS=4V 100 µA ±10 µA 2.4 V 25 32 mΩ 37 50 mΩ 1.0 7 Unit 10 S 700 pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 380 pF Crss VDS=10V, f=1MHz 180 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1498TS (KOTO) TA-1283 No.5908-1/4 FW213 Continued from preceding page. Parameter Symbol Turn-ON Delay Time min typ Unit max td(on) See Specified Test Circuit 15 ns tr See Specified Test Circuit 180 ns td(off) See Specified Test Circuit 90 ns tf See Specified Test Circuit 80 ns 22 nC 5 nC Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=10V, VGS=10V, ID=5A 6 IS=5A, VGS=0 nC 1.0 1.2 V Switching Time Test Circuit 10V 0V VDD=10V VIN ID=5A RL=2Ω VIN PW=10µs D.C.≤1% D VOUT G FW213 P.G 50Ω S I D - VDS VDS =10V 3V 9 8 3 2 75˚C 25˚C 6 5 Ta = - 2.5V 4 7 4 25˚C 5 Drain Current, ID – A 6 I D - VGS 10 10V Drain Current, ID – A 7 6V 4 3.5 V V 8V 8 3 2 1 0 0 1 VGS=2V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0 1.0 0.5 3 2 10 7 5 ˚C 25 =C Ta 75˚ 25˚C 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID – A 1.5 2.0 2.5 3.0 5 7 10 2 3 R DS(on) - VGS 60 VDS=10V Static Drain-to-Source On-State Resistance, RDS (on) – mΩ Forward Transfer Admittance, | yfs | – S | yf s | - I D 100 7 5 1.0 Gate-to-Source Voltage, VGS – V Drain-to-Source Voltage,VDS – V Tc=25˚C 50 40 30 ID=5A 20 10 0 0 2 4 6 8 10 12 14 16 18 20 Gate-to-Source Voltage, VGS – V No.5908-2/4 FW213 10 7 5 60 50 4V ,VGS = ID =5A 40 V S =10 ID =5A,VG 30 20 1.0 7 5 3 2 0.1 7 5 3 2 10 0 -60 -40 -20 0 20 40 60 80 100 120 0.01 0 140 0.1 0.2 Case Temperature, Tc – ˚C Ciss Coss Crss 100 7 5 3 2 10 15 20 25 30 SW Time – I D Drain Current, ID – A tr Switching Time, SW Time – ns 1.0 5 4 3 2 1 5 10 ,,,,,, ,,,,,, ,,,,,, ,,,,,, 2 t d(off) 100 tf 5 3 10 7 5 3 2 15 20 25 A S O 10 1m 0µs s 10m s I D =7A 1.0 7 5 Operation in this area 3 is limited by RDS(on). 2 100 ms DC op era tio n Ta=25˚C 2 0.1 1pulse 7 1unit 5 Mounted on a ceramic board (1000mm2×0.8mm) 3 2 3 5 7 1.0 2 3 5 7 10 t d(on) 2 3 5 7 1.0 2 3 5 7 10 2 P D (FET2) - P D (FET1) 1.8 M ou nte 1.6 do na 1.4 ce ram ic 1.2 bo ard 1.0 (1 00 0m m2 ×0 0.8 .8m m) 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1.0 1.2 3 5 1.4 1.6 P D - Ta 2.5 Allowable Power Dissipation, PD – W 2.0 2 Drain-to-Source Voltage, VDS – V Drain Current, ID – A Allowable Power Dissipation, PD (FET2) – W 0.9 6 100 7 I DP =52A 5 3 2 3 0 0.8 Total Gate Charge, Qg – nC 5 10 0.1 0.7 7 0 0 VDD =15V 7 VGS=10V 7 0.6 8 Drain-to-Source Voltage,VDS – V 1000 0.5 VDS=10V 9 ID =5A Gate-to-Source Voltage, VGS – V Ciss,Coss,Crss – pF 1000 7 5 3 2 5 0.4 VGS - Qg 10 f = 1MHz 10 0 0.3 Diode Forward Voltage, VSD – V Ciss,Coss,Crss - VDS 10000 7 5 3 2 0 - 25˚C 70 3 2 5˚C 80 Forward Current, IF – A Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 90 I F - VSD VGS= 0 25˚C 100 Ta =7 R DS(on) - Tc 1.8 Allowable Power Dissipation, PD (FET1) – W 2.0 2.0 1.7 To 1.5 tal Di ss 1.0 ip ati on 1u nit 0.5 0 0 Mounted on a ceramic board( 1000mm2×0.8mm) 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C No.5908-3/4 FW213 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 1998. Specifications and information herein are subject to change without notice. PS No.5908-4/4