Ordering number : ENN7548 FW250 N-Channl Silicon MOSFET FW250 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switcing. 4V drive. unit : mm 2129 [FW250] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 Specifications 0.595 1.27 0.43 0.1 1.5 5.0 SANYO : SOP8 Absolute Maximum Ratings at Ta=25°C Parameter 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V V 3 A A Drain Current (DC) ID Drain Current (PW≤10s) ID duty cycle≤1% 3.5 Drain Current (PW≤100ms) ID duty cycle≤1% 5.5 A PW≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation IDP PD Mounted on a ceramic board(2000mm2✕0.8mm)1unit, PW≤10s 1.8 W Total Dissipation PT Mounted on a ceramic board(2000mm2✕0.8mm), PW≤10s 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 60 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=3A 1.2 RDS(on)1 RDS(on)2 ID=3A, VGS=10V ID=1.5A, VGS=4V Unit max V 1 ±10 2.8 Marking : W250 2.6 4 µA µA V S 110 145 mΩ 150 215 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91603 TS IM TA-100553 No.7548-1/4 FW250 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 300 Output Capacitance 54 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 34 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr td(off) See specified Test Circuit. 23 ns See specified Test Circuit. 30 ns tf See specified Test Circuit. 40 ns Qg VDS=30V, VGS=10V, ID=3A 7.8 nC Gate-to-Source Charge Qgs nC Qgd VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A 2.4 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3A, VGS=0 Turn-OFF Delay Time Fall Time Total Gate Charge 1.7 nC 0.86 1.2 V Switching Time Test Circuit VDD=30V VIN 10V 0V ID=3A RL=10Ω VIN D VOUT PW=10µs D.C.≤1% G FW250 50Ω S 1.0 0.5 C 75° 3 2 1 0 0 0 0.1 0.2 0.3 0.4 0.5 Drain-to-Source Voltage, VDS -- V 0.6 0 0.7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 240 220 200 180 3A 140 120 100 80 60 40 20 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 2.0 2.5 3.0 3.5 4.0 IT06042 RDS(on) -- Ta 280 260 0 1.5 300 280 ID=1.5A 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 160 0.5 IT06041 RDS(on) -- VGS 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4 25 °C Drain Current, ID -- A 1.5 Ta= --25 ° 5 VG 5 V .0V 6.0 2.0 V .5 =3 S 4.0 Drain Current, ID -- A 2.5 10 V 8.0 V .0V VDS=10V C ID -- VGS 6 25 °C ID -- VDS 3.0 Ta= 75° C --25° C P.G 16 IT06043 260 240 220 4V S= 200 VG 5A, 180 1. I D= 160 V 140 10 S= , VG 3.0A 120 I D= 100 80 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 IT06044 No.7548-2/4 FW250 yfs -- ID ¡C 5 = Ta ¡C 25 3 5 --2 2 5¡C 7 1.0 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 2 0.1 7 5 3 0 5 7 10 IT06045 7 2 10 td(on) 7 tr 5 Ciss 100 7 5 2 2 Coss Crss 10 2 3 5 7 2 1.0 5 3 Drain Current, ID -- A 10 IT06047 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 10 7 5 3 2 0 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT06049 PD -- Ta 40 50 1m s ID=3A 10 ms 10 0m s 10 s Operation in this area is limited by RDS(on). 3 2 0.1 7 5 60 IT06048 ≤10µs 10 0µ s IDP=20A 1.0 7 5 3 2 1 30 ASO 5 9 2 20 Drain-to-Source Voltage, VDS -- V VDS=30V ID=3A 1 10 0 7 VGS -- Qg 10 2.5 1.2 IT06046 2 3 0 1.0 f=1MHz 3 3 1.0 0.1 0.8 5 Ciss, Coss, Crss -- pF tf 0.6 7 td(off) 3 0.4 Ciss, Coss, Crss -- VDS 1000 VDD=30V VGS=10V 5 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 100 Switching Time, SW Time -- ns 1.0 7 5 0.01 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 2 0.1 0.01 Allowable Power Dissipation, PD -- W VGS=0 Ta=7 5 ¡C 25¡C --25¡C 7 IF -- VSD 10 7 5 VDS=10V Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 10 DC op era tio n Ta=25°C Single pulse Mounted on a ceramic board(2000mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT06050 Mounted on a ceramic board(2000mm2✕0.8mm), PW≤10s 2.2 2.0 1.8 To t al di ss 1 u ipa nit tio 1.5 n 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06051 No.7548-3/4 FW250 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.7548-4/4