FW306 N- Channel Silicon MOS FET High Speed Switching TENTATIVE Features • High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs. • Low ON-state resistance. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation VDSS VGSS ID IDP PD Total Dissipation PT Channel Temperature Storage Temperature Tch Tstg PW≤10µS, dutycycle≤1% Mounted on ceramic board (1000mm2 ✕ 0.8mm) 1unit Mounted on ceramic board (1000mm2 ✕ 0.8mm) Electrical Characteristics / Ta=25°C (N-channel) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA VDS=30V VGS=±20V VDS=10V VDS=10V ID=5A ID=2A VDS=10V VDS=10V VDS=10V (P-channel) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=--1mA VDS=--30V VGS=±20V VDS=--10V VDS=--10V ID=--3A ID=--2A VDS=--10V VDS=--10V VDS=--10V N-channel 30 ±25 5 32 VGS=0 VGS=0 VDS=0 ID=1mA ID=5A VGS=10V VGS=4V f=1MHz f=1MHz f=1MHz 1.7 2.0 W 150 --55 to ±150 °C °C 1.0 5 , VGS = 0 min , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=--1mA ID=--3A VGS=--10V VGS=--4V f=1MHz f=1MHz f=1MHz max 100 ±10 2.5 8 50 84 460 340 85 13 300 30 50 1.0 typ 65 120 1.2 max --30 --1.0 3 See Specified Test Circuit IS=--3A typ 30 See Specified Test Circuit IS=5A unit V V A A W min , , , , , , , , , , P-channel 30 ±25 --3 --32 , VGS = 0 --100 ±10 --2.5 5 110 200 460 350 80 13 150 30 50 --1.0 160 320 --1.2 unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns V unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns V Specifications and information herin are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990401TM2fXHD FW306 Switching Time Test Circuit (P-channel) Switching Time Test Circuit (N-channel) VDD=15V VIN 10V 0V 4V -10V ID=5A RL=2Ω VIN PW=10µS D.C.≤1% D VDD=-15V VIN PW=10µS D.C.≤1% VOUT D P.G 50Ω 50Ω S S D2 D2 1.27 5.0 D1 0.43 Case Outline SOP8(unit:mm) Electrical Connection (Top View) D1 VOUT G G P.G ID=-3A RL=5Ω VIN 1.5 4.4 0.15 1.8max S1 G1 S2 G2 0.3 6.0 0.1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Specifications and information herin are subject to change without notice. 990401TM2fXHD SANYO Electric Co., Ltd. Semiconductor Company