Ordering number:EN4878 FX502 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions · Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. · The FX502 houses two chips, each being equivalent to the 2SD1805, in one package. · Matched pair characteristics. unit:mm 2118 [FX502] 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 60 V Collector-to-Emitter Voltage VCBO VCEO 20 V Emitter-to-Base Voltage VEBO 6 V IC 5 A ICP 8 A Base Current IB 1 A Collector Dissipation PC Mounted on ceramic board (750mm2×0.8mm) 1 unit 1.5 W Total Dissipation Mounted on ceramic board (750mm2×0.8mm) Junction Temperature PT Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) · Marking:502 2 W 150 ˚C –55 to +150 ˚C Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1389 No.4878-1/4 FX502 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=50V, IE=0 100 nA Emitter Cutoff Current IEBO hFE1 VEB=5V, IC=0 VCE=2V, IC=500mA 100 nA DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage hFE2 hFE(small/ large) fT Cob VCE(sat) VBE(sat) Turn-ON Time Storage Time Fall Time VCE=2V, IC=3A 95 VCE=2V, IC=500mA 0.8 560 VCE=10V, IC=500mA VCB=10V, f=1MHz 220 IC=3A, IB=60mA 220 500 1.0 1.5 IC=3A, IB=60mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO ton 160 IE=10µA, IC=0 MHz 45 pF mV V 60 V 20 V 6 V See sepcified Test Circuit 30 ns tstg See sepcified Test Circuit 300 ns tf See sepcified Test Circuit 40 ns No.4878-2/4 FX502 No.4878-3/4 FX502 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4878-4/4