SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS(on) = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • Ultra Low Gate Charge ( Typ. Qg = 86nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant D G TO-3PN G DS S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Units V ±30 V Continuous (TC = 25oC) 34.9 Continuous (TC = 100oC) 22 Pulsed Peak Diode Recovery dv/dt A (Note 1) 104.7 A (Note 2) 1800 mJ (Note 3) MOSFET dv/dt Ruggedness 12 A 3.12 mJ 50 100 V/ns (TC = 25oC) 312 W Derate above 25oC 2.6 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FCA36N60NF 600 -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCA36N60NF RθJC Thermal Resistance, Junction to Case 0.40 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. A Units o C/W 40 1 www.fairchildsemi.com FCA36N60NF N-Channel MOSFET, FRFET February 2011 Device Marking FCA36N60NF Device FCA36N60NF Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V ID = 1mA, Referenced to 25 C - 0.60 - V/oC VDS = 480V, VGS = 0V - - 10 - - 100 μA VGS = ±30V, VDS = 0V - - ±100 Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1mA, VGS = 0V,TJ = 25oC o TJ = 125oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 3.7 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 18A - 80 95 mΩ gFS Forward Transconductance VDS = 20V, ID = 18A - 39 - S VDS = 100V, VGS = 0V f = 1MHz - 3191 4245 pF - 145 195 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 5 8 Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 81 - pF Cosseff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 338 - pF Qg(tot) Total Gate Charge at 10V 86 112 nC Gate to Source Gate Charge VDS = 380V, ID = 18A, VGS = 10V - Qgs - 16 - nC Qgd Gate to Drain “Miller” Charge - 36 - nC ESR Equivalent Series Resistance (G-S) - 1.2 - Ω - 27 64 ns - 17 44 ns - 92 194 ns - 4 18 ns (Note 4) Drain Open, f=1MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 18A RG = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 36 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 18A - - 1.2 V trr Reverse Recovery Time - 166 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 18A dIF/dt = 100A/μs - 1.3 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 12A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 36A, di/dt ≤ 1200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCA36N60NF Rev. A 2 www.fairchildsemi.com FCA36N60NF N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 200 200 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics *Notes: 1. 250μs Pulse Test 10 o 2. TC = 25 C 10 o o 25 C 150 C o -55 C 1 1 0.1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 1 VDS, Drain-Source Voltage[V] 10 0.2 20 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS, Gate-Source Voltage[V] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 200 150 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 125 VGS = 10V 100 VGS = 20V 75 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o *Notes: TC = 25 C 0.2 0.2 50 0 18 36 54 72 ID, Drain Current [A] 90 108 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 10 10000 Capacitances [pF] Ciss 1000 Coss 10 1.4 Figure 6. Gate Charge Characteristics 100000 100 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] *Notes: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 FCA36N60NF Rev. A Crss 1 10 100 VDS, Drain-Source Voltage [V] 8 VDS = 120V VDS = 300V 6 VDS = 480V 4 2 *Notes: ID = 18A 0 600 0 3 20 40 60 80 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com FCA36N60NF N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 18A 0.5 0.0 -100 150 -50 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 500 40 10μs 100 100μs ID, Drain Current [A] ID, Drain Current [A] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1ms 10 10ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: 0.1 o 30 20 10 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 25 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 0.01 *Notes: Single pulse 0.005 -5 10 FCA36N60NF Rev. A PDM 0.05 t2 o 1. ZθJC(t) = 0.40 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FCA36N60NF N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FCA36N60NF N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCA36N60NF Rev. A 5 www.fairchildsemi.com FCA36N60NF N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FCA36N60NF Rev. A 6 www.fairchildsemi.com FCA36N60NF N-Channel MOSFET, FRFET Mechanical Dimensions TO-3PN FCA36N60NF Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 FCA36N60NF Rev. A 8 www.fairchildsemi.com FCA36N60NF N-Channel MOSFET, FRFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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