FAIRCHILD FJPF3835

FJPF3835
FJPF3835
Power Amplifier
• High Current Capability : IC=8A
• High Power Dissipation
• Wide S.O.A
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
200
Units
V
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
PC
Collector Dissipation (TC=25°C)
30
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
120
V
8
V
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
BVCEO
BVEBO
ICBO
IEBO
hFE
Test Condition
IC=5mA, IE=0
Min.
200
Collector-Emitter Breakdown Voltage
IC=10mA, RBE=∞
120
Emitter-Base Breakdown Voltage
IE=5mA, IC=0
Collector Cut-off Current
VCB=80V, IE=0
Emitter Cut-off Current
VEB=4V, IC=0
* DC
Current Gain
VCE=4V, IC=3A
Typ.
Max.
Units
V
V
8
V
120
0.1
mA
0.1
mA
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC=3A, IB=0.3A
0.5
VBE(sat)
Base-Emitter On Voltage
IC=3A, IB=0.3A
1.2
fT
Current Gain Bandwidth Product
VCE=5V, IC=1A
Cob
Output Capacitance
tON
Turn On Time
tF
Fall Time
tSTG
Storage Time
V
V
30
MHz
VCB=10V, f=1MHz
210
pF
VCC=20V,
IC=1A=10IB1=-10IB2
RL=20Ω
0.26
µs
0.68
µs
6.68
µs
* Pulse Test : PW=20µs
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
FJPF3835
Typical Characteristics
7
1000
IB = 35mA
VCE = 4V
o
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
6
5
4
3
IB = 10mA
2
IB = 5mA
o
TC = 125 C
o
100
0
2
4
6
10
0.01
8
0.1
VCE [V], COLLECTOR-EMITTER VOLTAGE
10
Figure 2. DC current Gain
1
10
IC = 10 IB
VBE(sat), SATURATION VOLTAGE
IC = 10 IB
0.1
o
TC = - 25 C
o
TC = 25 C
o
TC = 75 C
0.01
o
TC = 125 C
1E-3
0.01
0.1
1
o
1
TC = 25 C
o
TC = - 25 C
o
TC = 75 C
o
TC = 125 C
0.1
0.01
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
60
100
50
100ms
IC MAX. (DC)
10ms
1
0.1
Single Pulse
o
TC=25[ C]
PC[W], POWER DISSIPATION
IC MAX. (Pulse)
10
0.01
0.1
1
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic
VCE(sat) [V], SATURATION VOLTAGE
TC = 25 C
o
TC = - 25 C
1
0
IC[A], COLLECTOR CURRENT
TC = 75 C
40
30
20
10
0
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2004 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, May 2004
FJPF3835
Package Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I10