BAS70SV
70V Dual Schottky Barrier Diodes
Features
•
•
•
•
•
•
•
•
Low Forward Voltage Drop
Low Capacitance
Low Leakage Current
Fast Switching
Ultra Small Surface Mount Package
Lead Free By Design / RoHS Compliant
Green Compound
0.6mm Max Package Height
Absolute Maximum Ratings*
A1
C2
(Pin1)
SOT-563F
BAS70SV Marking : AD
ELECTRICAL SYMBOL
Note : Pinouts are symmetrical. Pin 1 & 4 are interchangeable.
The placement of the device in the carrier tape can be of either orientation.
TA = 25°C unless otherwise noted
Units
70
V
Average Rectified Forward Current
70
mA
Forward Surge Current
(8.3mS Single Half Sine Wave)
2.5
A
200
mW
-55 to +150
°C
Parameter
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
IFSM
PD
A2
Value
Symbol
TJ, TSTG
C1
Power Dissipation
Operating Junction and Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient *
Value
Units
625
°C/W
* Device mounted on board compliant to JESD51-2 and JESD51-3 standards.
Electrical Characteristics
Symbol
BVR
TA = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Max.
Units
Breakdown Voltage
IR = 100μA
IR
Reverse Current
VR = 50V
VR = 70V
0.02
0.1
2.5
μA
μA
VF
Forward Voltage
IF = 1mA
IF = 15mA
365
855
410
1000
mV
mV
Trr
Reverse Recovery Time
IF = IR = 10mA, Irr = 0.1IR
1.55
8
nS
Capacitance
VR = 0V, f = 1MHz
1.62
3
pF
Cap
70
Typ.
© 2011 Fairchild Semiconductor Corporation
BAS70SV Rev. A0
93
V
www.fairchildsemi.com
1
BAS70SV — 70V Dual Schottky Barrier Diodes
February 2011
Figure 1. Forward Current Characteristics
Figure 2. Reverse Leakage Current
1000000
o
o
TA= 75 C
o
TA=150 C
100000
Reverse Current, IR[nA]
Forward Current, IF[mA]
100
o
TA= 125 C
TA= 150 C
o
TA= 25 C
10
10000
o
TA=125 C
1000
o
TA=75 C
100
10
o
TA=25 C
1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
3.0
Forward Voltage, VF[V]
20
30
40
50
60
70
80
90
Reverse Voltage, VR[V]
Figure 3. Junction Capacitance
1.8
f = 1MHz
Juntion Capacitance, CJ[pF]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
2
4
6
8
10
Reverse Voltage, VR[V]
© 2011 Fairchild Semiconductor Corporation
BAS70SV Rev. A0
www.fairchildsemi.com
2
BAS70SV — 70V Dual Schottky Barrier Diodes
Typical Performance Characteristics
BAS70SV — 70V Dual Schottky Barrier Diodes
Physical Dimension
SOT-563F
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Dimensions in Millimeters
© 2011 Fairchild Semiconductor Corporation
BAS70SV Rev. A0
www.fairchildsemi.com
3
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Preliminary
First Production
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Full Production
Obsolete
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I53
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