Ordering number : ENN7554 TF202 N-channel Junction FET TF202 Electret Condenser Microphone Applications • • • Especially suited for use in electret condenser microphone. Ultrasmall package permitting TF202 applied sets to be made small and slim. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. unit : mm 2207A [TF202] Top View 1.4 Side View 0.25 0.1 3 2 0.3 1 0.45 1.4 0.8 • Package Dimensions Bottom View 0.2 3 1 : Drain 2 : Source 3 : Gate 0.6 Side View 0.07 • 0.3 Features 1 2 0.07 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Conditions SANYO : SSFP Ratings VGDO IG Gate Current Drain Current Unit --20 V 10 mA 1 mA 100 mW Junction Temperature ID PD Tj 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current V(BR)GDO VGS(off) IDSS yfs Forward Transfer Admittance Conditions IG=--100µA VDS=5V, ID=1µA VDS=5V, VGS=0 Input Capacitance Ciss VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz Ratings min typ max --20 --0.2 V --0.6 140* 0.5 Unit --1.2 500* 1.2 V µA mS 3.5 pF 0.65 pF Continued on next page. * : The TF202 is classified by IDSS as follows : (unit : µA) Rank E4 E5 E6 IDSS 140 to 240 210 to 350 320 to 500 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82903 TS IM TA-100524 No.7554-1/4 TF202 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max [Ta=25˚C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.] Voltage Gain GV ∆GVV ∆Gvf Reduced Voltage Characteristics Frequency Characteristics Input Resistance VIN=10mV, f=1kHz --3.0 VIN=10mV, f=1kHz, VCC=4.5→1.5V --1.2 dB --3.5 f=1kHz to 110Hz f=1kHz Output Resistance ZIN ZO Total Harmonic Distortion THD VIN=30mV, f=1kHz Output Noise Voltage VNO VIN=0, A curve dB --1.0 dB 25 f=1kHz mΩ 1000 Ω 1.0 % --110 dB Test Circuit Voltage gain Frequency Characteristics Distortion Reduced Voltage Characteristics 1kΩ VCC=4.5V VCC=1.5V 33µF + 15pF VTVM V THD B A OSC ID -- VDS 400 ID -- VDS 400 VGS=0 Drain Current, ID -- µA VGS=0 300 --0.1V 200 --0.2V 100 --0.3V --0.5V 300 --0.1V 200 --0.2V 100 --0.3V --0.4V --0.5V --0.4V 0 3 4 5 Drain-to-Source Voltage, VDS -- V IT05907 ID -- VGS VDS=5V 0 2 4 6 8 10 Drain-to-Source Voltage, VDS -- V ID -- VGS 600 400 200 µA 00 IT05908 600 VDS=5V 400 75 °C = Ta 200 C 2 2 5° C 25 ° 1 Drain Current, ID -- µA 0 --2 0 0 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 IT05909 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 IT05910 No.7554-2/4 Drain Current, ID -- µA 0 ID S 40 S =50 0 30 µA 0µA 0µ A Drain Current, ID -- µA Output Impedance TF202 yfs -- IDSS VDS=5V VGS=0 f=1kHz 2 1.0 7 7 100 2 5 7 7 5 3 7 1000 IT05911 Ciss -- VDS 100 2 5 3 3 5 7 Drain Current, IDSS -- µA 1000 IT05912 Crss -- VDS 2 VGS=0 f=1MHz Reverse Transfer Capacitance, Crss -- pF Input Capacitance, Ciss -- pF 3 Drain Current, IDSS -- µA 7 VGS=0 f=1MHz 1.0 7 5 3 2 7 1.0 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 7 3 --2 --4 --6 --8 7 100 2 3 5 7 Drain Current, IDSS -- µA 10 7 2 10 3 IT05914 0 --2 --4 7 Input Impedance, Zi -- MΩ 2 5 ∆GVV : VCC=4.5V➝1.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 100 2 3 5 7 Drain Current, IDSS -- µA 1000 IT05916 Zi -- IDSS 34 THD : VCC=4.5V VIN=30mV f=1MHz IDSS : VDS=5.0V 3 ∆GVV -- IDSS 2 1000 IT05915 THD -- IDSS 3 2 Drain-to-Source Voltage, VDS -- V Reduced Voltage Characteristics, ∆GVV -- dB GV : VCC=4.5V VIN=10mV RL=1.0kΩ f=1kHz IDSS : VDS=5.0V 0 1.0 IT05913 GV -- IDSS 2 Voltage Gain, GV -- dB VDS=5V ID=1µA 2 5 Total Harmonic Distortion, THD -- % VGS(off) -- IDSS --1.0 Cutoff Voltage, VGS(off) -- V Forward Transfer Admittance, yfs -- mS 3 Zi : VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 32 30 28 7 26 5 7 100 2 3 5 Drain Current, IDSS -- µA 7 1000 IT05917 7 100 2 3 5 Drain Current, IDSS -- µA 7 1000 IT05918 No.7554-3/4 TF202 Zo -- IDSS Zo : VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 1000 900 800 VNO : VCC=4.5V VIN=0, ACurve RL=1.0kΩ IDSS : VDS=5.0V --112 --114 --116 --118 --120 700 7 100 2 3 5 7 Drain Current, IDSS -- µA 7 1000 IT05919 THD -- VIN THD : VCC=4.5V f=1kHz IDSS : VDS=5.0V 2 10 7 0µ 4 =1 SS 5 ID A µA 250 µA 400 3 2 1.0 7 100 2 3 5 7 Drain Current, IDSS -- µA 1000 IT05920 PD -- Ta 120 Allowable Power Dissipation, PD -- mW 3 Total Harmonic Distortion, THD -- % VNO -- IDSS --110 Output Noise Voltage, VNO -- dB Output Impedance, Zo -- Ω 1100 100 80 60 40 20 0 5 0 40 80 120 160 Input Voltage, VIN -- mV 200 240 ITR02649 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 ITR02650 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2003. Specifications and information herein are subject to change without notice. PS No.7554-4/4