TS788 N- channel Junction FET Electret Condenser Microphone TENTATIVE Features • Especially suited for use in electret condenser microphone. • TS788 is possible to make applied sets smaller and Slimmer. • Excellent voltage characteristics. • Excellent transient characteristics. • Adoption of FBET process. Absolute Maximum Ratings / Ta=25°C unit VGDO IG ID PD Tj Tstg Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature --20 10 1 100 150 --55to+150 Electrical Characteristics / Ta=25°C min G-D Breakdown Voltage V( BR)GDO IG =--100µA VGS(off) VDS=5V, ID=1µA Cutoff Voltage IDSS VDS=5V, VGS=0 Drain Current | Yfs | VDS=5V, VGS=0, f=1kHz Forward Transfer Admittance Ciss VDS=5V, VGS=0, f=1MHz Input Capacitance VDS=5V, VGS=0, f=1MHz Crss Reverce Transfer Capacitance ❈ : The TS788 is classified by IDSS as follows : (unit : µA) --20 --0.2 140❈ 0.4 Marking E4 E5 E6 IDSS 140 to 240 210 to 350 320 to 500 [Ta=25°C, VCC=4.5V, RL=1kΩ, CIN=15pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristics GV ∆GVV Frequency Characteristics Input Resistance Output Resistance Total Harmonic Distortion Output Noise Voltage ∆GVf ZIN Zo THD VNO VIN=10mV, f=1kHz VIN=10mV, f=1kHz VCC=4.5→1.5V f=1kHz to 110Hz f=1kHz f=1kHz VIN=30mV, f=1kHz VIN=0 , A curve Voltage Gain Frequency Characteristics Distortion Reduced Voltage Characteristics to OSC max --0.6 --1.5 500❈ 1.2 4.1 0.88 unit V V µA mS pF pF typ max unit --3.0 --1.2 --3.5 dB dB --1.0 25 700 1.0 --110 0.3 dB mΩ Ω % dB 33uF + VTVM V THD B A 1kΩ Output Impedance 0.2 1.0 1.6 1.6 2 0.8 3 1 0.1 0 to 0.1 0.4 Vcc=4.5V Vcc=1.5V 0.6 0.75 15pF typ Package Dimensions SMCP (unit : mm) Test Circuit 1kΩ min V mA mA mW °C °C 1 : Drain 2 : Source 3 : Gate SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 971128TM2fXHD