VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO 100 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V IC 5 A Collector Current Collector Current (Pulse) ICP PC Collector Dissipation Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (900mm2✕0.8mm) 1unit 8 A 1.1 W 150 °C --55 to +150 °C 30 V [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) VDSS VGSS ±10 V ID 150 mA 600 mA Allowable Power Dissipation IDP PD Channel Temperature Storage Temperature PW≤10µs, duty cycle≤1% 0.25 W Tch 150 °C Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit [TR] Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat)1 VCE(sat)2 VCB=40V, IE=0 100 nA VEB=4V, IC=0 100 nA VCE=2V, IC=500mA 250 VCE=10V, IC=500mA VCB=10V, f=1MHz 400 330 MHz 26 IC=1.6A, IB=53mA IC=2A, IB=40mA Marking : AA pF 55 110 mV 75 150 mV Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12505EA TS IM TB-00001130 No.8198-1/6 VEC2901 Continued from preceding page. Parameter Symbol Base-to-Emitter Saturation Voltage Ratings Conditions min typ Unit max Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO IC=2A, IB=40mA IC=10µA, IE=0 100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 Turn-ON Time Storage Time Fall Time 0.9 1.2 V 6 V ton tstg See specified Test Circuit. 30 ns See specified Test Circuit. 360 ns tf See specified Test Circuit. 22 ns [FET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 VDS=30V, VGS=0 30 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0 VDS=10V, ID=100µA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=80mA 0.15 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage V 10 µA ±10 µA 1.3 0.22 V S ID=80mA, VGS=4V ID=40mA, VGS=2.5V 2.9 3.7 Ω 3.7 5.2 Ω ID=10mA, VGS=1.5V VDS=10V, f=1MHz 6.4 12.8 7.0 pF Ω Input Capacitance Ciss Output Capacitance Coss pF Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 5.9 Reverse Transfer Capacitance 2.3 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns tf See specified Test Circuit. 120 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 Diode Forward Voltage VSD IS=150mA, VGS=0 0.87 0.3 8 7 0.15 8 7 1 2 6 5 6 5 2 3 4 0.65 3 4 1 : Base 2 : Emitter 3 : Gate 4 : Drain 5 : Source 6 : Collector 7 : Collector 8 : Collector Top view 0.75 2.9 0.07 1 V Electrical Connection 2.3 0.25 2.8 0.25 Package Dimensions unit : mm 2240 nC 1.2 1 : Base 2 : Emitter 3 : Gate 4 : Drain 5 : Source 6 : Collector 7 : Collector 8 : Collector SANYO : VEC8 No.8198-2/6 VEC2901 Switching Time Test Circuit Switching TimeII Test Circuit VDD=15V VIN 4V 0V ID=80mA RL=187.5Ω VIN D IB1 PW=20µs D.C.≤1% IB2 OUTPUT INPUT VOUT RB PW=10µs D.C.≤1% RL VR 50Ω G + + 100µF P.G 50Ω 470µF VBE= --5V S VCC=25V IC= --20IB1= 20IB2=2.5A IC -- VCE [TR] VCE=2V 5 60m 15mA 3.0 10mA 8mA 6mA 2.5 2.0 4mA 1.5 1.0 2mA 4 3 2 25°C A Collector Current, IC -- A 20mA 4.0 3.5 IC -- VBE 6 1 --25°C A [TR] 30mA 4 50m 4.5 Collector Current, IC -- A 0mA Ta=75 °C 5.0 0.5 IB=0 0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 3 Ta=75°C 25°C 3 --25°C 2 0.6 0.8 1.0 IT08136 VCE(sat) -- IC [TR] [TR] IC / IB=20 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V DC Current Gain, hFE 0.4 Base-to-Emitter Voltage, VBE -- V VCE=2V 5 0.2 IT08135 hFE -- IC 7 0 0 1.0 0.1 7 5 °C 75 3 = Ta 2 25 0.01 C 5° --2 °C 7 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 0.01 7 2 3 5 7 0.1 2 3 5 7 1.0 [TR] Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.1 7 °C 75 3 0.01 0.01 °C 25 -- °C 2 25 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 5 7 IT08138 [TR] IC / IB=50 2 = Ta 3 VBE(sat) -- IC 2 IC / IB=50 5 2 Collector Current, IC -- A IT08137 VCE(sat) -- IC 3 5 7 IT08139 1.0 Ta= --25°C 7 25°C 75°C 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 IT08140 No.8198-3/6 VEC2901 Cob -- VCB [TR] Gain-Bandwidth Product, f T -- MHz 5 3 2 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 10 ms 10 DC 1.0 7 5 s s 0µ 0µ 50 3 2 s 0m s op era tio 3 2 n 0.1 7 5 Ta=25°C Single Pulse Mounted on a ceramic board (900mm2✕0.8mm) 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V ID -- VDS 0.16 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 ou [TR] ed on ac er am ic 0.6 bo ar d (9 00 m 0.4 8m m ) 20 40 60 80 100 0.04 ID -- VGS [FET] °C 75 0.15 0.10 0.05 0 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 10 --25 °C Ta= 0.20 0.02 0 0 1.0 0.5 1.0 1.5 2.5 2.0 3.0 Gate-to-Source Voltage, VGS -- V IT00029 [FET] 160 IT08144 0.25 0.06 140 25 °C Ta =7 5° --2 5°C C 5V V 2. 3.0 V 120 Ambient Temperature, Ta -- °C 0.30 2.0 VGS=1.5V 0.2 0. 0.2 0 [FET] 0.08 0 m2 ✕ 0 Drain Current, ID -- A 0.10 7 nt 0.8 7 100 IT08143 V 0.12 5 IT08142 M 1.0 5 6.0 Drain Current, ID -- A 3.5V 4.0V 3 PC -- Ta VDS=10V 0.14 2 1.1 10 IC=5A 7 1.2 <10µs 1m 100 Collector Current, IC -- A Collector Dissipation, PC -- W 10 7 5 7 [TR] ICP=8A 2 IT08141 ASO 2 Collector Current, IC -- A 5 3 10 0.01 10 3 5 °C Output Capacitance, Cob -- pF 7 2 [TR] VCE=2V 7 100 0.1 f T -- IC 1000 f=1MHz 25 2 IT00030 RDS(on) -- ID 10 [FET] Ta=25°C VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 80mA 6 5 ID=40mA 4 3 2 1 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT00031 7 5 Ta=75°C 25°C 3 --25°C 2 1.0 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00032 No.8198-4/6 VEC2901 RDS(on) -- ID [FET] VGS=2.5V 7 Ta=75°C 5 25°C --25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 3 =2. V GS 4.0V 40m S= I D= VG , A 80m I D= 4 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 0.7 --25 °C 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 100 7 3 10 Ciss 2 3 IT00034 [FET] VDS=10V 25°C -Ta= 2 75°C 0.1 25°C 7 5 3 2 2 3 5 7 2 0.1 3 5 IT00036 SW Time -- ID [FET] VDD=15V VGS=4V 5 3 td(off) tf 2 100 7 tr 5 3 td(on) 2 2 3 5 7 2 0.1 IT00038 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 2 Crss 2 0.01 Drain Current, ID -- A [FET] 3 3 7 5 [FET] VDS=10V ID=150mA 9 Coss 5 7 IT00037 5 5 3 yfs -- ID 10 0.01 1.2 f=1MHz 7 2 1000 Switching Time, SW Time -- ns °C 75 C 25° Ta= Forward Current, IF -- A 2 0.6 2 7 3 0.01 0.5 --25°C 25°C 3 Drain Current, ID -- A [FET] 2 5 5 0.01 0.01 160 3 7 Ta=75°C 7 1.0 VGS=0 0.1 10 IT00035 IF -- VSD 5 2 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5V A, 3 1.0 0.001 [FET] 6 5 5 IT00033 RDS(on) -- Ta 7 [FET] VGS=1.5V 7 5 Drain Current, ID -- A RDS(on) -- ID 100 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 No.8198-5/6 VEC2901 PD -- Ta Allowable Power Dissipation, PD -- W 0.30 [FET] 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Amibient Temperature, Ta -- °C 140 160 IT01962 Note on usage : Since the VEC2901 includes MOSFET, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8198-6/6