SK 25 GB 065
Absolute Maximum Ratings
Symbol Conditions
IGBT
9,1
9%,1
$
$?
# 5 0/ 8* # 5 0/ <: 8=
@ 6 = # 5 0/ <: 8=
#B
Values
Units
-::
; 0:
.: 06
-: A0
9
9
>
>
! A: +++ C 6/:
8
.- 0A
E0 A<
>
>
! A: +++ C 6/:
8
Inverse/Freewheeling diode
®
SEMITOP 1
IGBT Module
SK 25 GB 065
Preliminary Data
Features
!
"#! ! $%#
&
' (' )* + , -. /.0
Typical Applications
1
2
1
("1
&+ 456/7)
$D
$D? 5 ! $?
# 5 0/ <: 8=
@ 6 = # 5 0/ <: 8=
#B
#
#
#* 6: ! A: +++ C 60/
0-:
8
8
9
> /: )* +++ 6 + F 6 0/:: F .:::
9
Characteristics
Symbol Conditions
IGBT
9,
9%,
GB!
$ 5 0: >* #B 5 0/ 60/ 8
9, 5 9%,= $ 5 :*:::E >
9, 5 0/ 9= 9%, 5 : 9= 6 ?)
$%#
# 5 0/ 8* min.
typ.
max.
Units
.
6*< 0*6
A
6*-
0 0*0
/
9
9
D
HFI
6*A
J
9 5 .:: 9 * 9%, 5 ;6/ 9
$ 5 0/ >* #B 5 60/ 8
G% 5 G% 5 .. K
, C ,
$
2 HFI
.:
./
0/:
6/
6*./
L
Inverse/Freewheeling diode
9D 5 9,
9#
#
$D 5 0/ >= #B 5 0/ 60/ 8
#B 5 60/ 8
#B 5 60/ 8
6*A/ 6*A
:*</
00
GB!
$GG?
N
J
$D 5 0/ >= 9G 5 .:: 9
$DF 5 !/:: >FO
,
9%, 5 : 9= #B 5 60/ 8
6*E 6*E/
:*M
.0
9
9
K
6*E
HFI
60
>
O
:*0/
L
Mechanical data
?6
P
6*/
6.
1,?$#"Q 6
#.
GB
1
19-10-2005 RAM
© by SEMIKRON
SK 25 GB 065
Fig.5 Typ. output characteristic, tp = 80 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 80 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
19-10-2005 RAM
© by SEMIKRON
SK 25 GB 065
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Diode turn-off energy dissipation per pulse
3
19-10-2005 RAM
© by SEMIKRON
SK 25 GB 065
UL Recognized
File no. E 63532
Dimensions in mm
#.
%
1(%%,1#, ',$>?,#,G DG #, 1',G "$ 1 > #, ?( #$ % "$ 1 $ #,
"J 0 # .
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-10-2005 RAM
© by SEMIKRON