!"#$%&
'()* !"#$%&
!"#$%&
'()* !"#$%&
+
,"
-#$."
/$+#$.%
-$+
0
0
0
0
%
.#
"-
0
0
0" -777<#
-777<"#
"#
&
&
&'("
)"
*%!""#+",
"-#!%%",
*%!".""
1 23
4 5 6
" 9
3
:;
!%&
')* 7%&89"#&
')* 7%&89"#&
08) 7
.
!"#"#
$
%$
$
"8?"8-
-#
.#
"#
"#
"8+#
"8%
"8+?"8/
8
)C
$D
8-#?8-
8%#
.
.8.
8.+
8?8
8/
+
8"
)Ω
0
µ
)C
$D
8"
8"
$D
1=>:''
#0
9"#?"#&
2?:
.*,#
.0*9"#&
2?:55
3:
3:55""Ω
5
2@4 ;:2
:<:55
"#*8AB
9
'1
6 :2"=>:''
E
:55
9
#0
9"#?"#&
9"#&
9"#&
#08
.
2 $2%0$µ
89"#&
'2 :2
GH4:3 B25 ;:7+.#."
I 5J1
6 :2=
4 5 9
.#0
'2 :2
9"#&
)'@:
"#$&
Ω
$+
4 4;6
:@ 3:F@
"
"
.
"8#
)
!"#&8@;
:K '4 5 2
0H::;;20L ;H 5 )
4:;:3?:525
4:
4 4; 5:) :'4 5 ) 4:2@4:2 4@':) :44 47:K:3@L'2:
)'; 2 )232 32; 8'5:)4:@ ; 7
ms31nab063t1.xls - 1
100
A
ms31nab063t1.xls - 2
100
A
17V
15V
13V
11V
9V
7V
80
60
17V
15V
13V
11V
9V
7V
80
60
40
40
20
20
IC
IC
0
0
0
1
2
3
4
0
5
VCE
V
37'7:@'@44 48'%µ*"#&
ms31nab063t1.xls - 3
5
Eon
4
1
2
3
4
5
V
37"'7:@'@44 48'%µ*"#&
ms31nab063t1.xls - 4
5
9"#&
.
,#
""Ω
mWs
VCE
9"#&
.
,#
.0
mWs
4
Eon
3
3
2
2
Eoff
Eoff
1
1
E
E
0
0
0
20
IC
40
60
0
80
37.@=:$=:5535?
40
60
80
100
120
Ω
37-@=:$=:5535?
ms31nab063t1.xls - 5
20
20
RG
A
V
ms31nab063t1.xls - 6
10
'@;#0
nF
18
16
Cies
100V
14
5AB
300V
1
12
Coes
10
8
Cres
0,1
6
4
VGE
C
2
0
0,01
0
20
40
60
80
100
120
QGate
37#'734344 4
"
140 160
nC
0
VCE
10
20
30
V
40
37+'74'4 47
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
ICop / IC
1.2
Mini0607
Tj = 150 °C
VGE = ≥ 15 V
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
Tj = ≤ 150 °C
VGE = ± 15 V
tsc = ≤ 10 µs
Lext < 25 nH
Tj = ≤ 150 °C
VGE = ± 15 V
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
© by SEMIKRON
0698
B 16 – 3
!"