SEMIKRON SKM145GAL124DN

SKM 145GB124DN
Absolute Maximum Ratings
Symbol Conditions
IGBT
6(7
(
(<=
67
'? 6
SEMITRANSTM 2N
Low Loss IGBT Modules
SKM 145GB124DN
3 /4 9. 5(
3 - @7<)@ A Typical Applications
0 " 0
+ +
0
1( ' + '
1( )( + 2
0
0
Units
-/..
-:. -;.
/..
> /.
B. CCC D -4. -/4
6
)
)
6
5(
/4..
6
-/. :4
/..
)
)
--..
)
-/. :4
/..
)
)
--..
)
)( - C
%
%<=
3 /4 9. 5(
3 - %=
3 -. E CE ? 3 -4. 5(
Freewheeling diode
%
%<=
3 /4 9. 5(
3 %=
3 E E ? 3 5(
Characteristics
Symbol Conditions
IGBT
! "
# $ % & " '
()* ++
, + +
*
-. +
+
/. Values
Inverse diode
SKM 145GAL124DN
Features
3 /4 5( 0
"
+
67
(7
6(7@
(7
67 3 6(7 ( 3 B )
67 3 . 6(7 3 6(7 ? 3 /4 -/4 5(
? 3 /4 -/4 5(
67 3 -4 6 ? 3 /4 -/4 5(
6(7
( 3 -.. ) 67 3 -4 6 '
(
(
(
*(7
+
"0 +
67 3 . 6(7 3 /4 6 " 3 - =G
<((HD77H
C 3 5(
+
+""
"
6(( 3 #.. 6 ( 3 -.. )
< 3 <"" 3 9 F ? 3 -/4 5(
67 3 > -4 6
3 /4 5( 0
"
+
min.
B4
typ.
max.
Units
44
.-- --
-. -;
#4
.;
-/4 -/4
-/ -#
6
)
6
F
/- /B
/B4 /94
6
#4
.4
94
-4
.#
/4
%
%
%
F
7 7""
--.
4.
BI.
#.
-B -;
J
Inverse diode
6% 3 67(
6@
<<=
K
% 3 -.. )E 67 3 . 6E ? 3 /4 -/4
5(
? 3 /4 -/4 5(
? 3 /4 -/4 5(
% 3 -.. )E ? 3 -/4 5(
+L+ 3 /#.. )LM
7
67 3 . 6
/ -9
/4
6
-:
-..
-4
-/
-;
6
F
)
M(
4B
J
FWD
6% 3 67(
6@
<<=
K
% 3 -.. )E 67 3 . 6 ? 3 /4 -/4 5(
? 3 /4 -/4 5(
? 3 /4 -/4 5(
% 3 -.. )E ? 3 -/4 5(
+L+ 3 /#.. )LM
7
67 3 . 6
/ -9
-:
-..
-4
/4
-/
-;
4B
6
6
F
)
M(
J
Thermal characteristics
<?
<?1
<?%1
'
1+
%,1
.-#
.;/
.;/
NL,
NL,
NL,
<
+
..4
NL,
4
4
-#.
Mechanical data
GB
GAL
=
=
O =#
=4
0
1
14-09-2005 RAA
;
/4
© by SEMIKRON
SKM 145GB124DN
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
14-09-2005 RAA
© by SEMIKRON
SKM 145GB124DN
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
14-09-2005 RAA
© by SEMIKRON
SKM 145GB124DN
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
)*
(
1 :;
(
1 :B P 1 :;
(
1 :;
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
14-09-2005 RAA
© by SEMIKRON