SB29003 High Voltage Transistor SB29003 High Voltage Transistor 1 SOT-223 Marking: 5463003 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collector Dissipation (TC = 25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter BVCBO Collector-Base Breakdown Voltage BVCER BVEBO Conditions Min. Max Units IC = 100µA, IB = 0 500 Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 400 V Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 6 V ICBO Collector Cut-off Current VCB = 400V, IE = 0 0.1 µA ICES Collector Cut-off Current VCE = 400V, IB = 0 0.5 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 0.1 µA hFE DC Current Gain * VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 50mA VCE = 10V, IC = 100mA 40 50 45 40 V 200 VCE(sat) Collector-Emitter Saturation Voltage * IC = 1mA, IB = 0.1mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.4 0.5 0.75 V V V VBE(sat) Base-Emitter Saturation Voltage * IC = 10mA, IB = 1mA 0.75 V Cob Output Capatitance VCB = 20V, IE = 0, f = 1MHz 7 pF * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% ©2004 Fairchild Semiconductor Corporation SB29003 Rev. A 1 www.fairchildsemi.com Figure 1. DC Current Gain Figure 2. Capacitance 1000 160 o VCE=10V Ta=25 C f=1MHz Cib[pF],Cob[pF], CAPACITANCE 140 hFE, DC CURRENT GAIN 120 100 80 60 40 20 0 100 Cib 10 Cob -20 -40 1 10 100 1000 1 0.1 10000 1 IC[mA], COLLECTOR CURRENT 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. On Voltage Figure 4. Collector Saturation Region 0.5 1.0 VCE[V] COLLECTOR EMITTER VOLTAGE o Ta=25 C 0.8 VBE(sat) @IC/IB=10 [V], VOLTAGE 10 0.6 VBE(on) @VCE=10V 0.4 0.2 0.0 0.1 VCE(sat)@IC/IB=10 1 10 100 o IC=1mA IC=50mA Ta=25 c 0.4 0.3 0.2 0.1 0.0 10 1000 IC=10mA 100 1000 10000 100000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. High Frequency Current Gain hFE, SMALL SIGNAL CURRENT GAIN 100 VCE=10V f=10MHz o Ta=25 C 10 1 0.1 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT 2 SB29003 Rev. A www.fairchildsemi.com SB29003 High Voltage Transistor Typical Performance Characteristics SB29003 High Voltage Transistor Mechanical Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 10 +0.10 0.25 –0.05 0°~ 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° Dimensions in Millimeters 3 SB29003 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 4 SB29003 Rev. A www.fairchildsemi.com SB29003 High Voltage Transistor TRADEMARKS