FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON). • 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.8 mm height when mounted to PCB • 3.5 x 4 mm2 Footprint Applications • High power and current handling capability. • DC/DC converters D D D D D D D S S S S D D S S S S D D S S S S D D G S S S D Pin 1 G S Top Bottom Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range PD TJ, Tstg D F7064S Pin 1 RDS(ON) = 9 mΩ @ VGS = 4.5 V Ratings Units 30 ±16 13.5 60 2.2 –55 to +150 V V A W °C Thermal Characteristics R R R Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 °C/W Package Marking and Ordering Information Device Marking 7064S 2004 Fairchild Semiconductor Corporation Device FDZ7064S Reel Size 13” Tape width 12mm Quantity 3000 FDZ7064S Rev. B2 (W) FDZ7064S May 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 10mA, Referenced to 25°C VGS = 0 V 500 uA IGSS Gate–Body Leakage VGS = ±16 V, VDS = 0 V ±100 nA 3 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) gFS VGS = 0 V, VDS = 24 V, ID = 1mA 30 V 26 mV/°C (Note 2) Gate Threshold Voltage VDS = VGS, Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance ID = 1mA 1 1.4 ID = 10mA, Referenced to 25°C –0.5 VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 12 A VGS=10 V, ID=13.5A, TJ =125°C mV/°C VDS = 5 V, ID = 13.5 A 6 7 9 66 7 9 11 VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2840 pF 525 pF 190 pF VGS = 15 mV, ID = 6 A 1.9 Ω VDS = 15 V, VGS = 10 V, 11 20 ns 12 22 ns ns mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 50 80 tf Turn–Off Fall Time 18 32 ns Qg Total Gate Charge 25 35 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 ID = 13.5 A, 7 nC 6 nC Drain–Source Diode Characteristics VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 3.2 A 0.4 (Note 1) IF = 13.5 A, diF/dt = 300 A/µs See Diode Characteristic, page 5 0.7 V 22 ns 19 nC Notes: 1. R is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, R , is defined for reference. For R , the thermal reference point for the case is defined as the top surface of the copper chip carrier. R and R are guaranteed by design while R is determined by the user' s board design. a) 56°C/W when mounted on a 1in2 pad of 2 oz copper b) 119°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2004 Fairchild Semiconductor Corporation FDZ7064S Rev. B2 (W) FDZ7064S Electrical Characteristics FDZ7064S Typical Characteristics 60.00 2.25 ID, DRAIN CURRENT (A) 50.00 3.0V 3.5V 6.0V 40.00 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10.0 V 4.5V 2.5V 30.00 20.00 10.00 2.0V 0.00 0.00 VGS = 2.5V 2 1.75 3.0V 1.5 3.5V 1.25 4.5V 6.0V 10.0V 1 0.75 0.25 0.50 0.75 1.00 1.25 1.50 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.60 40 RDS(ON), ON-RESISTANCE (MILLIOHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 13.5A VGS = 10V 1.40 1.20 1.00 0.80 ID =6.8A 30 20 TA = 125oC 10 TA = 25oC 0 0.60 -50 -25 0 25 50 75 100 125 0 150 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 4.0V 40 30 o TA = 125 C o 25 C 20 10 -55oC 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ7064S Rev B2 (W) FDZ7064S Typical Characteristics 4000 ID = 13.5A f = 1MHz VGS = 0 V 8 VDS = 10V 6 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 4 20V 2 3000 Ciss 2000 Coss 1000 Crss 0 0 0 10 20 30 40 0 50 5 Figure 7. Gate Charge Characteristics. 20 50 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 1000 1ms 10ms 10 100ms 1s 10s 1 VGS = 10V SINGLE PULSE RθJA = 119oC/W 0.1 DC TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 119°C/W TA = 25°C 40 30 20 10 0 0.01 100 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 119 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ7064S Rev B2 (W) FDZ7064S Typical Characteristics SyncFET Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) CURRENT : 0.4A/div Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDZ7064S. 0.1 TA = 125oC 0.01 TA = 100oC 0.001 0.0001 TA = 25oC 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDZ7064S SyncFET body diode reverse recovery characteristic. CURRENT : 0.4A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET . Figure 13. Non-SyncFET (FDZ7064N) body diode reverse recovery characteristic. FDZ7064S Rev B2 (W) FDZ7064S Dimensional Outline and Pad Layout FDZ7064S Rev B2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11