GSD2004WS Vishay Semiconductors New Product formerly General Semiconductor High-Voltage Small-Signal Switching Diode SOD-323 .012 (0.3) .065 (1.65) .076 (1.95) Mounting Pad Layout 0.055 (1.40) 0.062 (1.60) .006 (0.15) max. .004 (0.1) max. 0.047 (1.20) Dimensions in inches and (millimeters) .059 (1.5) .043 (1.1) Top View .049 (1.25) max. .100 (2.55) .112 (2.85) Cathode Band .010 (0.25) min. Mechanical Data Features Case: SOD-323 Plastic Package Weight: approx. 0.004g Marking Code: B6 Packaging Codes/Options: D5/10K per 13” reel (8mm tape), 30K/box D6/3K per 7” reel (8mm tape), 30K/box • Silicon Epitaxial Planar Diode • Fast switching diode,especially suited for applications requiring high voltage capability Maximum Ratings and Thermal Characteristics Parameter TA = 25°C unless otherwise noted Symbol Value Unit VR 240 V Peak Repetitive Reverse Voltage VRRM 300 V Peak Repetitive Reverse Current IRRM 200 mA IF 225 mA Peak Repetitive Forward Current IFRM 625 mA Non-Repetitive Peak Forward Current at tp = 1µs at tp = 1s IFSM 4.0 1.0 A Power Dissipation Ptot 200 (1) mW RΘJA (1) Continuous Reverse Voltage Forward Current (continuous) Typical Thermal Resistance Junction to Ambiant Air 650 °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Device on Fiberglass Substrate, see layout on second page Document Number 88202 14-May-02 www.vishay.com 1 GSD2004WS Vishay Semiconductors formerly General Semiconductor Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit VBR IR = 100µA 300 — — V Leakage Current IR VR = 240V VR = 240V, Tj = 150°C — — — — 100 100 nA µA Forward Voltage VF IF = 20mA IF = 100mA — — 0.83 — 0.87 1.00 V Capacitance Ctot VF = VR = 0 f = 1MHz — — 5.0 pF — — 50 ns Reverse Breakdown Voltage Reverse Recovery Time trr IF = IA = 30mA Irr = 3.0mA, RL = 100Ω Note: (1 )Device on fiberglass substrate, see layout www.vishay.com 2 Document Number 88202 14-May-02