FAIRCHILD RMWB33001

RMWB33001
33 GHz Buffer Amplifier MMIC
General Description
Features
The RMWB33001 is a 4-stage GaAs MMIC amplifier
designed as a 33 GHz Buffer Amplifier for use in point to
point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF
amplifiers, multipliers and mixers it forms part of a complete
38 GHz transmit/receive chipset. The RMWB33001 utilizes
our 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier
applications.
•
•
•
•
•
4 mil Substrate
Small-signal Gain 24dB (typ.)
Saturated Power Out 19dBm (typ.)
Voltage Detector Included to Monitor Pout
Chip size 3.2mm x 1.2mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Ratings
+6
-2
8
173
+8
-30 to +85
Storage Temperature Range
-55 to +125
°C
RJC
Thermal Resistance (Channel to Backside)
130
°C/W
©2004 Fairchild Semiconductor Corporation
Units
V
V
V
mA
dBm
°C
RMWB33001 Rev. C
RMWB33001
June 2004
Parameter
Frequency Range
Gate Supply Voltage1 (Vg)
Gain Small Signal (Pin = -15dBm)
Gain Variation vs. Frequency
Power Output Saturated: (Pin = +1dBm)
Drain Current at Psat
Power Added Efficiency (PAE): at Psat
Input Return Loss (Pin = -15dBm)
Output Return Loss (Pin = -15dBm)
DC Detector Voltage at Pout = 18dBm
Min
32
20
17
Typ
Max
35
-0.2
24
2.0
19
120
15
12
12
1.0
Units
GHz
V
dB
dB
dBm
mA
%
dB
dB
V
Note:
1: Typical range of gate voltage is -0.5 to 0V to set Idq of 112mA.
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs
compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper
tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of
withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy
solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated
and is used as RF and DC ground.
These GaAs devices should be handled with care and
stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and
should be handled with appropriate precaution including the
use of wrist grounding straps. All die attach and wire/ribbon
bond equipment must be well grounded to prevent static
discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil
thick gold ribbon with lengths as short as practical allowing
for appropriate stress relief. The RF input and output bonds
should be typically 0.012" long corresponding to a typical 2
mil gap between the chip and the substrate material.
Drain Supply Drain Supply Drain Supply Drain Supply
Vd1
Vd4
Vd3
Vd2
MMIC Chip
RF IN
RF OUT
Ground
(Back of Chip)
Gate Supply
Vg
Output Power
Detector Voltage
Vdet
Figure 1. Functional Block Diagram1
Note:
1: Detector delivers >0.1V DC into 3kΩ load resistor for > +18dBm output power. If output power level detection is not desired, do not connect to detector bond pad.
©2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
RMWB33001
Electrical Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current Idq = 112mA
RMWB33001
Figure 2. Schematic of Application Circuit
Drain Supply
Vd =4 V
Bond Wires
10,000 pF
10,000 pF
Bond Wires
100 pF
100 pF
100pF
100 pF
MMIC Chip
RF IN
RF OUT
Bond Wires
100 pF
Ground
(Back of Chip)
3 kΩ
Bond Wires
100 pF
10,000 pF
Gate Supply Vg
Output Power
Detector Voltage Vdet
Note:
1: Detector delivers >0.1V DC into 3kΩ load resistor for > +18dBm output power. If output power level detection is not desired, do not connect to detector bond pad.
Figure 3. Chip Layout and Bond Pad Locations
Dimensions in mm
0.00
0.82
1.34
1.83
2.58
3.19
1.19
1.09
1.19
1.09
0.725
0.725
0.57
0.57
0.415
0.415
0.10
0.00
0.10
0.00
0.00 0.10
0.60
2.85 3.09 3.19
Chip Size is 3.19mm x 1.19mm X 100µm. Back of chip is RF and DC Ground.
©2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
RMWB33001
Figure 4. Recommended Assembly Diagram
Drain Supply
Vd = 4 V
Die-Attach
80Au/20Sn
10,000pF
10,000pF
5mil Thick
Alumina
50Ω
100pF
100pF
100pF
100pF
5 mil Thick
Alumina
50Ω
RF
Input
RF
Output
100pF
100pF
3kΩ
10,000pF
2 mil Gap
L< 0.015”
(4 Places)
Gate Supply Vg
Output Power
Detector Voltage Vdet
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Test Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 112mA.
The following sequence of steps must be followed to
properly test the amplifier:
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 1: Turn off RF input power.
Step 6: Follow turn-off sequence of:
Step 2: Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias
supply voltage of -1.5V to Vg.
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Step 3: Slowly apply positive drain bias supply voltage of
+4V to Vd.
©2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
RMWB33001 33 GHz BA, Typical Small Signal Performance
50Ω Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25°C
RMWB33001 33 GHz BA, Typical Small Signal Performance
50Ω Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25°C
26
0
30
0
25
-5
-5
-10
20
-15
18
-20
20
S21 (dB)
S11
22
S11, S22 (dB)
S21 (dB)
24
32
33
34
Frequency (GHz)
35
36
-25
37
0
21
18
24
17
23
16
22
13
20
19
35 GHz
P3dB (dBm), G3dB (dB)
22
14
5
16
14
16
13
31
©2004 Fairchild Semiconductor Corporation
0
G3dB (T=75°C)
15
17
-2
P3dB (T=75°C)
17
10
-12
-4
-30
40
35
P3dB (T=25°C)
18
11
-6
Pin (dBm)
30
G3dB (T=25°C)
19
18
-8
15
20
25
Frequency (GHz)
20
12
-10
10
RMWB33001 33 GHz BA, Power Output and Gain at 3 dB
Compression vs. Frequency and Temperature,
50Ω FixtureMeasurements, Vd=4 V, Idq = 112 mA
25
21
-25
0
19
32 GHz
33 GHz
34 GHz
-20
5
RMWB33001 33 GHz BA, Power Output and Gain vs. Power In
50Ω Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25°C
20
26
15
-15
S22
S21
Gain (dB)
Pout (dBm)
31
15
10
S22
16
30
-10
S11
S11, S22 (dB)
S21
32
33
34
Frequency (GHz)
35
36
RMWB33001 Rev. C
RMWB33001
Performance Data
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As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11