HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Features • >100kHz Operation At 390V, 7A • 200kHz Operation At 390V, 5A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER™ Model www.fairchildsemi.com Packaging JEDEC STYLE TO-247 E C G Formerly Developmental Type TA49333. Ordering Information PART NUMBER COLLECTOR (FLANGE) PACKAGE BRAND HGTG7N60A4D TO-247 G7N60A4D HGTP7N60A4D TO-220AB G7N60A4D HGT1S7N60A4DS TO-263AB G7N60A4D JEDEC TO-220AB E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S7N60A4DS9A. C G Symbol COLLECTOR (FLANGE) C JEDEC TO-263AB G E COLLECTOR (FLANGE) G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2005 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 34 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 14 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 56 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS MIN TYP MAX UNITS 600 - - V - - 250 µA - - 2 mA - 1.9 2.7 V - 1.6 2.2 V 4.5 5.9 7 V - - ±250 nA 35 - - A - 9 - V VGE = 15V - 37 45 nC VGE = 20V - 48 60 nC - 11 - ns - 11 - ns - 100 - ns - 45 - ns IC = 250µA, VGE = 0V VCE = 600V IC = 7A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC IC = 250µA, VCE = 600V VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP IC = 7A, VCE = 300V On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Qg(ON) td(ON)I trI td(OFF)I tfI Turn-On Energy EON1 Turn-On Energy EON2 Turn-Off Energy (Note 2) EOFF Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time td(ON)I trI td(OFF)I tfI IC = 7A, VCE = 300V IGBT and Diode at TJ = 25oC, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω, L = 1mH, Test Circuit (Figure 24) IGBT and Diode at TJ = 125oC, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω, L = 1mH, Test Circuit (Figure 24) - 55 - µJ - 120 150 µJ - 60 75 µJ - 10 - ns - 7 - ns - 130 150 ns - 75 85 ns Turn-On Energy (Note 2) EON1 - 50 - µJ Turn-On Energy (Note 2) EON2 - 200 215 µJ Turn-Off Energy (Note 3) EOFF - 125 170 µJ ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS IEC = 7A - 2.4 - V IEC = 7A, dIEC/dt = 200A/µs - 34 - ns IEC = 1A, dIEC/dt = 200A/µs - 22 - ns IGBT - - 1.0 oC/W Diode - - 2.2 oC/W NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 150 40 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH 30 20 10 0 100 0 TC , CASE TEMPERATURE (oC) fMAX, OPERATING FREQUENCY (kHz) TC VGE 75oC 15V 200 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.0oC/W, SEE NOTES TJ = 125oC, RG = 25Ω, L = 1mH, V CE = 390V 30 5 1 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2005 Fairchild Semiconductor Corporation 300 400 500 600 700 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (µs) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 500 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 20 16 140 VCE = 390V, RG = 25Ω, TJ = 125oC 120 14 ISC 12 100 10 80 8 60 tSC 6 40 20 4 10 11 12 13 14 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 35 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS 30 Unless Otherwise Specified DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 25 TJ = 125oC 20 15 10 TJ = 25oC 5 0 TJ = 150oC 0 0.5 2.5 1.0 1.5 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 20 15 10 TJ = 125oC 5 TJ = 150oC TJ = 25oC 0 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.0 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE RG = 25Ω, L = 1mH, VCE = 390V EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 25 0 400 TJ = 125oC, VGE = 12V, VGE = 15V 300 200 100 TJ = 25oC, VGE = 12V, VGE = 15V 0 2 4 6 8 10 12 ICE , COLLECTOR TO EMITTER CURRENT (A) RG = 25Ω, L = 1mH, VCE = 390V 300 250 200 TJ = 125oC, VGE = 12V OR 15V 150 100 50 0 14 TJ = 25oC, VGE = 12V OR 15V 0 2 10 12 14 RG = 25Ω, L = 1mH, VCE = 390V trI , RISE TIME (ns) TJ = 125oC, VGE = 12V TJ = 25oC, VGE = 15V 10 8 40 TJ = 25oC, VGE = 12V 12 6 FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT RG = 25Ω, L = 1mH, VCE = 390V 14 4 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT td(ON)I, TURN-ON DELAY TIME (ns) DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 350 500 16 30 3.0 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 0 (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves TJ = 25oC, VGE = 12V, VGE = 15V 30 20 10 TJ = 125oC, VGE = 15V TJ = 125oC, VGE = 12V, VGE = 15V 0 8 0 2 4 6 8 10 12 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2005 Fairchild Semiconductor Corporation 14 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Typical Performance Curves Unless Otherwise Specified (Continued) 180 90 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 25Ω, L = 1mH, VCE = 390V RG = 25Ω, L = 1mH, VCE = 390V 80 160 120 VGE = 12V, TJ = 125oC 100 70 tfI , FALL TIME (ns) VGE = 15V, TJ = 125oC 140 VGE = 15V, TJ = 25oC TJ = 125oC, VGE = 12V OR 15V 60 50 TJ = 25oC, VGE = 12V OR 15V 40 80 30 VGE = 12V, TJ = 25oC 60 20 0 2 4 6 8 10 12 14 0 2 ICE , COLLECTOR TO EMITTER CURRENT (A) 120 15 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs TJ = 25oC 80 TJ = 125oC 60 TJ = -55oC 40 20 0 8 7 9 11 10 12 13 14 9 VCE = 200V 6 3 0 5 400 ICE = 7A ICE = 3.5A 0 125 TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE ©2005 Fairchild Semiconductor Corporation 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ) ICE = 14A 100 10 15 20 25 30 35 40 FIGURE 14. GATE CHARGE WAVEFORMS 600 75 14 QG , GATE CHARGE (nC) ETOTAL = EON2 + EOFF 50 12 VCE = 400V 0 15 RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V 25 10 VCE = 600V 12 FIGURE 13. TRANSFER CHARACTERISTIC 200 8 IG(REF) = 1mA, RL = 43Ω, TJ = 25oC VGE, GATE TO EMITTER VOLTAGE (V) 800 6 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 100 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 14A 1 ICE = 7A ICE = 3.5A 0.1 10 100 RG, GATE RESISTANCE (Ω) 1000 FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Unless Otherwise Specified 1.4 FREQUENCY = 1MHz C, CAPACITANCE (nF) 1.2 1.0 0.8 CIES 0.6 0.4 COES 0.2 CRES 0 0 20 (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Typical Performance Curves 40 60 80 2.8 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs 2.6 2.4 ICE = 14A 2.2 ICE = 7A 2.0 ICE = 3.5A 1.8 9 100 10 FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 13 14 15 16 100 dIEC/dt = 200A/µs DUTY CYCLE < 0.5%, PULSE DURATION = 250µs 30 trr , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 12 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 35 25 20 125oC 25oC 15 10 125oC trr 80 60 125oC tb 125oC ta 40 25oC trr 25oC ta 20 5 25oC tb 0 0 0 1 2 3 VEC , FORWARD VOLTAGE (V) 4 5 50 IEC = 7A, VCE = 390V 125oC tb 40 30 125oC ta 25oC ta 20 25oC tb 10 100 200 300 400 500 600 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT ©2005 Fairchild Semiconductor Corporation 4 2 6 10 8 12 14 FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT Qrr, REVERSE RECOVERY CHARGE (nc) 60 0 IEC , FORWARD CURRENT (A) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP trr, RECOVERY TIMES (ns) 11 VGE, GATE TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 700 500 VCE = 390V 125oC, IEC = 7A 400 300 125oC, IEC = 3.5A 200 25oC, IEC = 7A 100 25oC, IEC = 3.5A 0 100 200 300 400 500 600 700 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.5 0.2 0.1 10-1 t1 0.05 PD t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG7N60A4D 90% 10% VGE EON2 EOFF L = 1mH VCE RG = 25Ω 90% DUT + - ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2005 Fairchild Semiconductor Corporation FIGURE 25. SWITCHING TEST WAVEFORMS HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2005 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15