SL05 THRU SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. They are available with operating voltages of 5V, 12V, 15V and 24V. TVS diodes are solid-state devices designed specifically for transient suppression. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage and no device degradation. The SL series devices feature a low capacitance, fast switching compensation diode in series with a standard TVS diode. This effectively reduces the overall capacitance of the device to less than 5pF making it an integrated, low capacitance solution for use on high-speed interfaces. The SL series devices may be used to meet the immunity requirements of IEC 61000-4-2, level 4. u Transient protection for high-speed data lines to u u u u u IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 12A (8/20µs) Small package for use in portable electronics Two devices will protect one line Low capacitance for high-speed data lines Working voltages: 5V, 12V, 15V and 24V Solid-state silicon avalanche technology Mechanical Characteristics u u u u JEDEC SOT23 package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 Applications u u u u u u Circuit Diagram High-Speed data lines Cellular handsets & accessories Universal Serial Bus (USB) port protection Portable instrumentation LAN/WAN equipment Peripherals Schematic & PIN Configuration 1 3 (N.C.) 2 SOT23 Top View Revision 9/2000 1 www.semtech.com SL05 THRU SL24 PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbo l Value Units Peak Pulse Pow er (tp = 8/20µ s) Pp k 300 Watts ESD Voltage (HBM p er IEC 61000-4-2) I PP >25 kV Lead Sold ering Temp erature TL 260 (10 sec.) °C Op erating Temp erature TJ -55 to +125 °C TSTG -55 to +150 °C Storage Temp erature Electrical Characteristics SL05 Par ame te r Symbo l Co nd itio ns Minimum Typ ical Maximum Units 5 V Reverse Stand -Off Voltage VRWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 5V, T=25°C 20 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 9.8 V Clamp ing Voltage VC IPP = 5A , tp = 8/20µ s 11 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 17 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 5 pF Symbo l Co nd itio ns Maximum Units 12 V 6 V SL12 Par ame te r Minimum Typ ical Reverse Stand -Off Voltage VRWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 12V, T=25°C 1 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 19 V Clamp ing Voltage VC IPP = 5A , tp = 8/20µ s 24 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 12 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 5 pF ã 2000 Semtech Corp. 2 13.3 V www.semtech.com SL05 THRU SL24 PROTECTION PRODUCTS Electrical Characteristics (Continued) SL15 Par ame te r Symbo l Co nd itio ns Minimum Typ ical Maximum Units 15 V Reverse Stand -Off Voltage VRWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 15V, T=25°C 1 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 24 V Clamp ing Voltage VC IPP = 5A , tp = 8/20µ s 30 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 10 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 5 pF Symbo l Co nd itio ns Maximum Units 24 V 16.7 V SL24 Par ame te r Minimum Typ ical Reverse Stand -Off Voltage VRWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 24V, T=25°C 1 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 43 V Clamp ing Voltage VC IPP = 5A , tp = 8/20µ s 55 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 5 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 5 pF ã 2000 Semtech Corp. 3 26.7 V www.semtech.com SL05 THRU SL24 PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 10 110 Peak Pulse Power - PPP (kW) 100 % of Rated Power or I PP 90 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0 0.1 1 10 100 25 1000 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Duration - tp (µ s) Pulse Waveform 110 Waveform Parameters: tr = 8µs td = 20µs 100 90 Percent of IPP 80 70 e 60 -t 50 40 td = IPP/2 30 20 10 0 0 5 10 15 20 25 30 Time (µs) ESD Pulse Waveform (Per IEC 61000-4-2) IEC 61000-4-2 Discharge Parameters Level ã 2000 Semtech Corp. 4 First Peak Current Peak Current at 30 ns Peak Current at 60 ns Test Test Voltage Voltage (Contact ( A ir Disch arge) Disch arge) (kV ) (kV ) (A) (A) (A) 1 7.5 4 8 2 2 2 15 8 4 4 4 3 22.5 12 6 6 8 4 30 16 8 8 15 www.semtech.com SL05 THRU SL24 PROTECTION PRODUCTS Applications Information Device Connection for Protection of One High-Speed Data Line SL Connection Options The SL series devices are designed to protect highspeed data lines. The SLxx utilizes a low capacitance compensation diode in series with, but in opposite polarity to a TVS diode in each line to achieve an effective capacitance of less than 5pF per device. During a transient event, the internal rectifier must be forward biased (TVS is reversed biased). Therefore, each device will only suppress transient events in one polarity. To achieve protection in both positive and negative polarity, a second device is connected in antiparallel to the first. On unidirectional lines, a fast switching steering diode may be used as an alternative to using two SL devices. The options for connecting the devices are as follows: l l Two Devices : Bidirectional or Unidirectional Line Low capacitance protection of one high-speed line: Protection of one unidirectional or bidirectional high-speed line is achieved by connecting two devices in anti-parallel. Pin 1 of the first device is connected to the line and pin 2 is connected to ground (or to a second line for differential protection). Pin 2 of the second device is connected to line 1 and pin 1 is connected to ground (or line 2) as shown. Pin 3 is not connected. During positive duration transients, the first device will conduct from pin 1 to 2. The steering diode conducts in the forward direction while the TVS will avalanche and conduct in the reverse direction. During negative transients, the second device will conduct in the same manner. For optimum protection, the ground connections should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. The path length between the TVS and the protected line should also be minimized. One Devices with Steering Diode : Unidirectional Line Only I/O Line Protection Connection Option for Unidirectional Lines Only: An optional method for protecting unidirectional (normal signal polarities above ground) lines is to add a fast switching steering diode in parallel to the SL TVS. Input/outputs are connected to pin 1 of the SL device and the cathode of the rectifier. The anode of the diode and pin 2 of the SL TVS are connected to ground. ã 2000 Semtech Corp. 5 www.semtech.com SL05 THRU SL24 PROTECTION PRODUCTS Outline Drawing - SOT23 Land Pattern - SOT23 Note 1 : Grid placement courtyard is 8 x 8 elements (4mm x 4mm) in accordance with the international grid detailed in IEC Publication 97. ã 2000 Semtech Corp. 6 www.semtech.com SL05 THRU SL24 PROTECTION PRODUCTS Marking Codes Par t Numbe r Mar king Co d e SL05 L05 SL12 L12 SL15 L15 SL24 L24 Ordering Information Par t Numbe r Wo r king Vo ltage Qty p e r R e e l R e e l Size SL05.TC 5V 3,000 7 Inch SL05.TG 5V 10,000 13 Inch SL12.TC 12V 3,000 7 Inch SL12.TG 12V 10,000 13 Inch SL15.TC 15V 3,000 7 Inch SL15.TG 15V 10,000 13 Inch SL24.TC 24V 3,000 7 Inch SL24.TG 24V 10,000 13 Inch Contact Information Semtech Corporation Protection Products Division 652 Mitchell Rd., Newbury Park, CA 91320 Phone: (805)498-2111 FAX (805)498-3804 ã 2000 Semtech Corp. 7 www.semtech.com