SMF05 AND SMF12 TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features u Transient protection for data lines to The SMF series TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage-induced transient events. They are designed for use in applications where board space is at a premium. Each device will protect up to four lines. They are unidirectional devices and may be used on lines where the signal polarities are above ground. TVS diodes are solid-state devices designed specifically for transient suppression. They feature large cross-sectional area junctions for conducting high transient currents. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation. The SMF series devices may be used to meet the immunity requirements of IEC 61000-4-2, level 4. The small SC70 package makes them ideal for use in portable electronics such as cell phones, PDAs, notebook computers, and digital cameras. u u u u u u Mechanical Characteristics u u u u EIAJ SC70-5L package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 Applications u u u u u u u u Circuit Diagram 1 IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) Small package for use in portable electronics Protects four I/O lines Working voltage: 5V & 12V Low leakage current Low operating and clamping voltages Solid-state silicon-avalanche technology Cellular Handsets & Accessories Cordless Phones Personal Digital Assistants (PDAs) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Schematic & PIN Configuration 3 4 5 5 1 2 3 4 2 SC70-5L (Top View) Revision 9/2000 1 www.semtech.com SMF05 & SMF12 PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbo l Value Units Peak Pulse Pow er (tp = 8/20ms) Pp k 200 Watts Peak Pulse Current (tp = 8/20ms) I PP 12 A Peak Forw ard Voltage (IF = 1A, tp =8/20ms) V FP 1.5 V ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) V ESD 20 15 kV Lead Soldering Temp erature TL 260 (10 seconds) o Op erating Temp erature TJ -55 to +125 o TSTG -55 to +150 o Storage Temp erature C C C Electrical Characteristics SMF05 Par ame te r Symbo l Co nd itio ns Minimum Typ ical Maximum Units 5 V Reverse Stand-Off Voltage VRWM Reverse Breakdow n Voltage V BR It = 1mA Reverse Leakage Current IR VRWM = 5V, T=25°C 10 µA Clamp ing Voltage VC IPP = 1A, tp = 8/20µs 9.5 V Clamp ing Voltage VC IPP = 12A, tp = 8/20µs 12.5 V Junction Cap acitance Cj Betw een I/O p ins and Gnd V R = 0V, f = 1MHz 150 175 pF Symbo l Co nd itio ns Typ ical Maximum Units 12 V 6 V SMF12 Par ame te r Minimum Reverse Stand-Off Voltage VRWM Reverse Breakdow n Voltage V BR It = 1mA Reverse Leakage Current IR VRWM = 12V, T=25°C 1 µA Clamp ing Voltage VC IPP = 1A, tp = 8/20µs 19 V Clamp ing Voltage VC IPP = 8A, tp = 8/20µs 25 V Junction Cap acitance Cj Betw een I/O p ins and Gnd V R = 0V, f = 1MHz 75 pF ã 2000 Semtech Corp. 2 13.3 V 60 www.semtech.com SMF05 & SMF12 PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 10 90 % of Rated Power or I PP Peak Pulse Power - P PP (kW) 100 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 25 Pulse Waveform 75 100 125 150 Clamping Voltage vs. Peak Pulse Current 110 30 90 80 70 e 60 Clamping Voltage - V C (V) Waveform Parameters: tr = 8µs td = 20µs 100 Percent of IPP 50 Ambient Temperature - TA (oC) Pulse Duration - tp (µs) -t 50 40 td = IPP/2 30 20 25 20 SMF12 15 SMF05 10 Waveform Parameters: tr = 8µs td = 20µs 5 10 0 0 0 5 10 15 20 25 0 30 SMF05 ESD Clamping (8kV Contact per IEC 61000-4-2) ã 2000 Semtech Corp. 2 4 6 8 10 12 14 16 Peak Pulse Current - IPP (A) Time (µs) SMF12 ESD Clamping (8kV Contact per IEC 61000-4-2) 3 www.semtech.com SMF05 & SMF12 PROTECTION PRODUCTS Applications Information SMF Circuit Diagram Device Connection for Protection of Four Data Lines The SMFxx is designed to protect up to four unidirectional data lines. The device is connected as follows: 1 3 4 5 1. Unidirectional protection of four I/O lines is achieved by connecting pins 1, 3, 4, and 5 to the data lines. Pin 2 is connected to ground. The ground connection should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. 2 Circuit Board Layout Recommendations for Suppression of ESD. Protection of Four Unidirectional Lines Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: l Place the SMFxx near the input terminals or connectors to restrict transient coupling. l Minimize the path length between the SMSxx and the protected line. l Minimize all conductive loops including power and ground loops. l The ESD transient return path to ground should be kept as short as possible. l Never run critical signals near board edges. l Use ground planes whenever possible. ã 2000 Semtech Corp. 4 www.semtech.com SMF05 & SMF12 PROTECTION PRODUCTS Typical Applications ã 2000 Semtech Corp. 5 www.semtech.com SMF05 & SMF12 PROTECTION PRODUCTS Outline Drawing - SC70-5L Land Pattern - SC70-5L ã 2000 Semtech Corp. 6 www.semtech.com SMF05 & SMF12 PROTECTION PRODUCTS Marking Codes Par t Numbe r Mar king Co d e SMF05 F05 SMF12 F12 Note: (1) Pin 1 Identified with a dot Ordering Information Par t Numbe r Wo r king Vo ltage Qty p e r R e e l R e e l Size SMF05.TC 5V 3,000 7 Inch SMF05.TG 5V 10,000 13 Inch SMF12.TC 12V 3,000 7 Inch SMF12.TG 12V 10,000 13 Inch Contact Information Semtech Corporation Protection Products Division 652 Mitchell Rd., Newbury Park, CA 91320 Phone: (805)498-2111 FAX (805)498-3804 ã 2000 Semtech Corp. 7 www.semtech.com