FJB5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application D2-PAK 1 1.Base 2.Collector Absolute Maximum Ratings* 3.Emitter Ta = 25°C unless otherwise noted Symbol Value Units BVCBO Collector-Base Voltage 1050 V BVCEO Collector-Emitter Voltage 400 V BVEBO Emitter-Base Voltage 14 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP Collector Current (Pulse) TJ Junction Temperature TSTG Parameter Storage Junction Temperature Range 4 A 150 °C - 55 to 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Ta = 25°C unless otherwise noted Symbol PD Rθja Parameter Total Device Dissipation Value Units 1.6 100 W W 77.75 °C/W 1.25 °C/W Ta = 25°C Tc = 25°C Thermal Resistance, Junction to Ambient Rθjc Thermal Resistance, Junction to Case * Device mounted on minimum pad size Ordering Information Part Number Marking Package Packing Method FJB5555TM J5555 D2-PAK Tape & Reel © 2012 Fairchild Semiconductor Corporation FJB5555 Rev. A0 Remarks www.fairchildsemi.com 1 FJB5555 — NPN Silicon Transistor February 2012 Symbol Ta = 25°C unless otherwise noted Parameter BVCBO Collector-Base Breakdown Voltage BVCEO BVEBO hFE Conditions IC=500μA, IE=0 Units Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 V Emitter-Base Breakdown Voltage IE=500μA, IC=0 14 V DC Current Gain VCE=5V, IC=10mA 10 VCE=3V, IC=0.8A 20 VBE(sat) Base-Emitter Saturation Voltage Cob Output Capacitance VCB=10V, f=1MHz tON Turn On Time tSTG Storage Time VCC=125V, IC=0.5A IB1=45mA, IB2=-0.5A RL=250Ω Fall Time tON Turn On Time tSTG Storage Time EAS Max. V Collector-Emitter Saturation Voltage tF Typ. 1050 VCE(sat) tF Min. Fall Time Avalanche Energy IC=1A, IB=0.2A 40 0.17 0.5 V IC=3.5A, IB=1.0A 1.5 V IC=3.5A, IB=1.0A 1.2 V 45 μs 1.2 μs 2.0 μs 2.5 μs 0.3 μs μs 0.3 VCC=250V, IC=2.5A IB1=0.5A, IB2=-1.0A RL=100Ω L=2mH pF 1.0 6 mJ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2012 Fairchild Semiconductor Corporation FJB5555 Rev. A0 www.fairchildsemi.com 2 FJB5555 — NPN Silicon Transistor Electrical Characteristics* VCE(SAT) [V], Collector-Emitter Saturation Voltage o o VCE = 5V Ta = 125 C Ta = 75 C hFE, DC CURRENT GAIN 100 o Ta = - 25 C o Ta = 25 C 10 1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT 1 IC = 5 IB o Ta = 125 C o Ta = 75 C o Ta = 25 C o Ta = - 25 C 0.1 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Saturation Voltage tSTG tSTG & tF [ns], SWITCHING TIME VBE(sat) [V], SATURATION VOLTAGE 1000 IC = 5 IB o Ta = 25 C 1 o Ta = - 25 C o Ta = 75 C o Ta = 125 C 0.1 0.01 0.1 1 100 tF VCC=125V IB1=45mA, IB2=0.5A 10 0.1 10 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Resistive Load Switching 120 10000 100 PC[W], POWER DISSIPATION tSTG & tF [ns], SWITCHING TIME 110 tSTG 1000 tF 100 VCC=250V IB1=0.5A, IB2=1.0A 80 70 60 50 40 30 20 10 0 10 0.1 1 0 10 IC [A], COLLECTOR CURRENT 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 5. Resistive Load Switching Figure 6. Power Derating © 2012 Fairchild Semiconductor Corporation FJB5555 Rev. A0 90 www.fairchildsemi.com 3 FJB5555 — NPN Silicon Transistor Typical Characteristics FJB5555 — NPN Silicon Transistor Typical Characteristics (Continued) 8 Vcc = 50V VBE(off) = -5V LC = 1mH Ic = 4 Ib IC[A], COLLECTOR CURRENT 7 6 5 4 -5V 3 2 1 0 200 300 400 500 600 700 800 900 1000 1100 1200 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating © 2012 Fairchild Semiconductor Corporation FJB5555 Rev. A0 www.fairchildsemi.com 4 FJB5555 — NPN Silicon Transistor Physical Dimensions D2-PAK Dimensions in Millimeters © 2012 Fairchild Semiconductor Corporation FJB5555 Rev. A0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ Motion-SPM¥ mWSaver¥ OptoHiT¥ OPTOLOGIC® OPTOPLANAR® 2Cool¥ AccuPower¥ AX-CAP¥* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ ® * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) 2. A critical component in any component of a life support, device, or are intended for surgical implant into the body or (b) support or system whose failure to perform can be reasonably expected to sustain life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 © Fairchild Semiconductor Corporation www.fairchildsemi.com