2N2369A HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 40 V V CB O Collector-base Voltage (I E = 0) V CE S Collector-emitter Voltage (V BE = 0) 40 V V CE O Collector-emitter Voltage (I B = 0) 15 V V EB O Emitter-base Voltage (I C = 0) 4.5 V Collector Current 0.2 A I CM Collector Current (10 µs pulse) 0.5 A Pt ot Total Power Dissipation at T amb ≤ 25 °C at T c ase ≤ 25 °C at T c ase ≤ 100 °C 0.36 1.2 0.68 W W W – 65 to 200 °C IC T s t g, T j Storage and Junction Temperature November 1988 1/6 2N2369A THERMAL DATA R t h j -c ase R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 146 486 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit 30 µA 0.4 µA I CBO Collector Cutoff Current (I E = 0) V CB = 20 V I CES Collector Cutoff Current (V B E = 0) V CE = 20 V Collector-base Breakdown Voltage (I E = 0) I C = 10 µA 40 V Collector-emitter Breakdown Voltage (V BE = 0) I C = 10 µA 40 V Collector-emitter Breakdown Voltage (I B = 0) I C = 10 mA 15 V Emitter-base Breakdown Voltage (I C = 0) I E = 10 µA 4.5 V V (BR) CBO V (BR)CES V (B R)CEO * V (BR) EBO V CE (s at )* Collector-emitter Saturation Voltage I C = 10 mA I C = 30 mA I C = 100 mA I C = 10 mA T am b = 125 °C T amb = 150 °C IB IB IB IB = 1 mA = 3 mA = 10 mA = 1 mA 0.7 0.14 0.17 0.28 0.2 0.25 0.5 V V V 0.19 0.3 V 0.8 0.9 1.1 0.85 1.15 1.6 V V V 1.02 V Base-emitter Saturation Voltage IB I C = 10 mA I B = 30 mA IB I C = 100 mA IB I C = 10 mA IB T am b = – 55 to 125 h F E* DC Current Gain IC IC IC IC 0.35 V 1V 0.4 V 1V 40 40 30 20 63 66 71 h F E* DC Current Gain I C = 10 mA V CE = 0.35 V T am b = – 55 °C 20 50 Transition Frequency I C = 10 mA f = 100 MHz V CE = 10 V 500 675 C CB O Collector-base Capacitance IE = 0 f = 1 MHz V CB = 5 V t s ** Storage Time t o n ** t o f f ** V BE (s at ) fT * = = = = 10 mA 10 mA 30 mA 100 mA = 1 mA = 3 mA = 10 mA = 1 mA °C V CE V CE V CE V CE = = = = 0.59 120 120 MHz 2.3 4 pF I C = 10 mA V CC = 10 V I B 1 = – I B2 = 10 mA 6 13 ns Turn-on Time I C = 10 mA I B 1 = 3 mA V CC = 3 V 9 12 ns Turn-off Time I C = 10 mA I B 1 = 3 mA V CC = 3 V I B2 = – 1.5 mA 13 18 ns * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/6 Min. 2N2369A DC Current Gain. Collector-emitter Saturation Voltage. Collector-base and emitter-base capacitances. Contours of Constant Transition Frequency. Switching Characteristics. Switching Characteristics. 3/6 2N2369A Test Circuit for ts Test Circuit for ton, toff 4/6 2N2369A TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 5/6 2N2369A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6