2N3700 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-base Voltage (I E = 0) 140 V V CEO Collector-emitter Voltage (I B = 0) 80 V V EBO Emitter-base Voltage (I C = 0) 7 V Collector Current 1 A 0.5 1.8 1 W W W – 65 to 200 °C IC Pt o t T s t g, T j January 1989 Parameter Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature 1/4 2N3700 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 97 350 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter I CBO Collector Cutoff Current (I E = 0) V CB = 90 V V CB = 90 V I E BO Emitter Cutoff Current (I C = 0) V EB = 5 V V (B R)CBO Collector-base Breakdown Voltage (I E = 0) I C = 100 µA 140 V V (BR)CE O * Collector-emitter Breakdown Voltage (I B = 0) I C = 30 mA 80 V V (B R)E BO Emitter-base Breakdown Voltage (I C = 0) I E = 100 µA 7 V V CE( sat )* Collector-emitter Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA 0.2 0.5 V V Base-emitter Saturation Voltage I C = 150 mA I B = 15 mA 1.1 V I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA IC = 1 A I C = 150 mA T amb = – 55 °C V CE V CE V CE V CE V CE V CE V BE( sat )* h F E* Min. Typ. T amb = 150 °C Max. Unit 10 10 nA µA 10 nA DC Current Gain = 10 = 10 = 10 = 10 = 10 = 10 V V V V V V 50 90 100 50 15 300 40 hfe Small Signal Current Gain I C = 1 mA f = 1 kHz V CE = 5 V fT Transition Frequency I C = 50 mA f = 20 MHz V CE = 10 V 100 MHz C EBO Emitter-base Capacitance IC = 0 f = 1 MHz V E B = 0.5 V 60 pF C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V 12 pF Feedback Time Constant I C = 10 mA f = 4 MHz V CB = 10 V r b b ’C b ’c * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/4 Test Conditions 80 25 400 400 ps 2N3700 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 3/4 2N3700 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4