STMICROELECTRONICS 2N3904-AP

2N3904
®
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Ordering Code
Marking
Package / Shipment
2N3904
2N3904
TO-92 / Bulk
2N3904-AP
2N3904
TO-92
■
■
■
/ Ammopack
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE PNP COMPLEMENTARY TYPE IS
2N3906
APPLICATIONS
■ WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
TO-92
Bulk
TO-92
Ammopack
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
60
V
V CEO
Collector-Emitter Voltage (I B = 0)
40
V
V EBO
Emitter-Base Voltage (I C = 0)
6
V
200
mA
625
mW
IC
Collector Current
o
P tot
Total Dissipation at T C = 25 C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
February 2003
-65 to 150
o
C
150
o
C
1/5
2N3904
THERMAL DATA
R thj-amb •
R thj-case •
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Max
Max
o
200
83.3
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CEX
Collector Cut-off
Current (V BE = -3 V)
Parameter
V CE = 30 V
50
nA
I BEX
Base Cut-off Current
(V BE = -3 V)
V CE = 30 V
50
nA
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
Test Conditions
Min.
Typ.
I C = 1 mA
40
V
V (BR)CBO
Collector-Base
Breakdown Voltage
(I E = 0)
I C = 10 µA
60
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 µA
6
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 10 mA
I C = 50 mA
I B = 1 mA
I B = 5 mA
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 10 mA
I C = 50 mA
I B = 1 mA
I B = 5 mA
0.65
DC Current Gain
IC
IC
IC
IC
IC
V CE = 1 V
V CE = 1 V
V CE = 1 V
V CE = 1 V
V CE = 1 V
60
80
100
60
30
h FE ∗
fT
=
=
=
=
=
0.1 mA
1 mA
10 mA
50 mA
100 mA
0.85
0.95
V
V
300
Transition Frequency
I C = 10 mA V CE = 20 V f = 100 MHz
270
MHz
Collector-Base
Capacitance
IE = 0
V CB = 10 V
f = 1 MHz
4
pF
C EBO
Emitter-Base
Capacitance
IC = 0
V EB = 0.5 V
f = 1 MHz
18
pF
NF
Noise Figure
V CE = 5 V IC = 0.1 mA f = 10 Hz
to 15.7 KHz R G = 1 KΩ
5
dB
Delay Time
Rise Time
I C = 10 mA
V CC = 30 V
ts
Storage Time
I C = 10 mA
Fall Time
V CC = 30 V
tf
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/5
V
V
C CBO
td
tr
I B = 1 mA
I B1 = -I B2 = 1 mA
250
0.2
0.2
35
35
ns
ns
200
50
ns
ns
2N3904
TO-92 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.195
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.095
0.105
e1
1.14
1.40
0.045
0.055
L
12.70
15.49
0.500
0.609
R
2.16
2.41
0.085
0.094
S1
1.14
1.52
0.045
0.059
W
0.41
0.56
0.016
0.022
V
4 degree
6 degree
4 degree
6 degree
3/5
2N3904
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
DIM.
A1
T
T1
T2
d
P0
P2
F1,F2
delta H
W
W0
W1
W2
H
H0
H1
D0
t
L
I1
delta P
4/5
MIN.
mm
TYP.
12.50
5.65
2.44
-2.00
17.50
5.70
8.50
18.00
6.00
9.00
18.50
15.50
16.00
3.80
4.00
3.00
-1.00
12.70
6.35
2.54
MAX.
4.80
3.80
1.60
2.30
0.48
12.90
7.05
2.94
2.00
19.00
6.30
9.25
0.50
20.50
16.50
25.00
4.20
0.90
11.00
1.00
MIN.
inch
TYP.
0.492
0.222
0.096
-0.079
0.689
0.224
0.335
0.709
0.236
0.354
0.728
0.610
0.630
0.150
0.157
0.118
-0.039
0.500
0.250
0.100
MAX.
0.189
0.150
0.063
0.091
0.019
0.508
0.278
0.116
0.079
0.748
0.248
0.364
0.020
0.807
0.650
0.984
0.165
0.035
0.433
0.039
2N3904
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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