2N5657 SILICON NPN TRANSISTOR ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (IE = 0) 375 V V CEO Collector-Emitter Voltage (I B = 0) 350 V V EBO Emitter-Base Voltage (I C = 0) IC I CM IB Parameter Collector Current Collector Peak Current Base Current o P t ot Total Dissipation at T c ≤ 25 C T stg St orage Temperature Tj June 1997 Max. Operating Junction Temperature 6 V 0.5 A 1 A 0.25 A 20 W -65 to 150 o C 150 o C 1/5 2N5657 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 6.25 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CBO Collector Cut-off Current (IE = 0) V CE = 375 V I CEV Collector Cut-off Current (V BE = -1.5V) V CE = 350 V V CE = 250 V I CEO Collector Cut-off Current (IB = 0) V CE = 250 V I EBO Emitter Cut-off Current (I C = 0) V EB = 6 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage I C = 1 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage I C = 100 mA V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 0.1 A I C = 0.25 A I C = 0.5 A V BE ∗ Base-Emitter Voltage I C = 0.1 A hFE∗ DC Current G ain IC IC IC IC = = = = 50 mA 0.1 A 0.25 A 0.5 A Tc = 100 o C L = 50 mH Small Signal Current Gain I C = 0.1 A VCE = 10 V f = 1KHz 20 fT Transition frequency I C = 50 mA V CE = 10 V f =10MHz 10 Collector Base Capacitance V CB = 10 V f = 100KHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 0.01 mA 0.1 1 mA mA 0.1 mA 0.01 mA V 25 30 15 5 V V V V Un it 350 VCE = 10 V = 10 = 10 = 10 = 10 Max. V I B = 10 mA IB = 25 mA I B = 0.1 A V CE V CE VCE V CE Typ . 350 hf e C CBO 2/5 Min. 1 2.5 10 V V V 1 V 250 MHz 25 pF 2N5657 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) 3/5 2N5657 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 4/5 2N5657 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5