2N5681 2N5682 SILICON NPN TRANSISTORS ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching applications. The complementary PNP types are the 2N5679 and 2N5680 respectively. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5680 2N5682 120 V 120 V V CBO Collector-Base Voltage (I E = 0) 100 V CEO Collector-Emitter Voltage (I B = 0) 100 V EBO Emitter-Base Voltage (I C = 0) 4 V IC Collector Current 1 A IB Base Current 0.5 A P tot Total Dissipation at T c ≤ 25 o C 10 W P tot Total Dissipation at T amb ≤ 50 o C T stg Tj July 1997 Storage Temperature Max. Operating Junction Temperature 1 W -65 to 200 o C 200 o C 1/4 2N5681 / 2N5682 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 17.5 175 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Max. Unit for 2N5681 for 2N5682 T c = 150 o C for 2N5681 for 2N5682 Test Conditions V CE = 100 V V CE = 120 V 1 1 µA µA V CE = 100 V V CE = 120 V 1 1 µA µA 1 1 µA µA 10 10 µA µA 1 µA I CBO Collector Cut-off Current (I E = 0) for 2N5681 for 2N5682 V CB = 100 V V CB = 120 V I CEO Collector Cut-off Current (I B = 0) for 2N5681 for 2N5682 V CB = 70 V V CB = 80 V I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ I C = 10 mA for 2N5681 for 2N5682 I C = 250 mA I C = 500 mA IC = 1 A I B = 25 mA I B = 50 mA I B = 200 mA V BE ∗ Base-Emitter Voltage I C = 250 mA V CE = 2 V h FE ∗ DC Current Gain I C = 250 mA IC = 1 A V CE = 2 V V CE = 2 V hfe Small Signal Current Gain I C = 0.2 A fT Transition frequency I C = 100 mA Collector Base Capacitance IE = 0 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Typ. 100 120 Collector-Emitter Saturation Voltage C CBO 2/4 Min. V CE = 1.5 V V CE = 10 V V CB = 20 V 40 5 f = 1KHz 40 f =10MHz 30 f = 1MHz V V 0.6 1 2 V V V 1 V 150 MHz 50 pF 2N5681 / 2N5682 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N5681 / 2N5682 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4