2N6388 ® SILICON NPN POWER DARLINGTON TRANSISTOR ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium frequency power applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 160 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I B = 0) 80 V V CEV Collector-Emitter Voltage (V BE = -1.5V) 80 V V CER Collector-Emitter Voltage (R BE ≤ 100Ω) Collector-Emitter Voltage (I B = 0) 80 V V CEO 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC I CM IB P tot T stg Tj April 1999 Collector Current 10 A Collector Peak Current 15 A Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature 0.25 A 65 W -65 to 150 o C 150 o C 1/4 2N6388 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.92 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit 0.3 3 mA mA I CEV Collector Cut-off Current (V BE = -1.5V) V CE = rated V CEO V CE = rated V CEO I CEO Collector Cut-off Current (I B = 0) V CE = 80 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 5 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 200 mA V CER(sus) ∗ Collector-Emitter Sustaining Voltage I C = 200 mA V CEV(sus) ∗ Collector-Emitter Sustaining Voltage T c = 125 o C 80 V R BE = 100 Ω 80 V I C = 200 mA V BE = -1.5V 80 V Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 10 mA I B = 100 mA V BE ∗ Base-Emitter Voltage IC = 5 A I C = 10 A V CE = 3 V V CE = 3 V h FE ∗ DC Current Gain IC = 5 A I C = 10 A V CE = 3 V V CE = 3 V h fe Small Signal Current Gain IC = 1 A IC = 1 A VF∗ Parallel-diode Forward Voltage I F = 10 A C CBO Collector Base Capacitance IE = 0 I s/b ∗∗ Second Breakdown Collector Current V CE = 25 V E s/b Second Breakdown Energy L = 12 mH V BE = -1.5 V V CE(sat) ∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ∗∗ Pulsed: Pulse duration = 100ms non repetitive pulse. 2/4 Min. V CE = 10 V V CE = 10 V V CB = 10 V 1000 100 f = 1MHz f = 1KHz V V 2.8 4.5 V V 20000 20 1000 f = 1MHz R BE = 100 Ω IC = 4.5 A 2 3 4 V 200 pF 2.6 A 120 mJ 2N6388 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 2N6388 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4