STMICROELECTRONICS 2N6488

2N6487
2N6488/2N6490
®
COMPLEMENTARY SILICON POWER TRANSISTORS
■
■
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The 2N6487 and 2N6488 are silicon
epitaxial-base NPN transistors in Jedec TO-220
plastic package.
They are inteded for use in power linear and low
frequency switching applications.
The 2N6487 complementary type is 2N6490.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
NPN
PNP
Unit
2N6487
2N6490
2N6488
Collector-Base Voltage (I E = 0)
70
90
V
70
90
V
V CEO
Collector-Emitter Voltage (V BE =-1.5V,R BE =100Ω)
Collector-Emitter Voltage (I B = 0)
80
V
V EBO
IC
Emitter-Base Voltage (I C = 0)
Collector Current
5
15
V
A
Base Current
5
75
A
W
V CBO
V CEX
IB
P tot
T stg
Tj
Total Dissipation at T c ≤ 25 C
Storage Temperature
Max. Operating Junction Temperature
o
60
-65 to 150
150
o
o
C
C
For PNP types voltage and current values are negative.
April 1999
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2N6487 / 2N6488 / 2N6490
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
1.67
70
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CEX
Parameter
Collector Cut-off
Current (V BE = -1.5V)
Max.
Unit
for 2N6487/2N6490
for 2N6488
T c = 150 o C
for 2N6487/2N6490
for 2N6488
Test Conditions
V CE = 65 V
V CE = 85 V
Min.
Typ.
0.5
0.5
mA
mA
V CE = 60 V
V CE = 80 V
5
5
mA
mA
I CER
Collector Cut-off
Current (R BE = 100Ω)
for 2N6487/2N6490
for 2N6488
V CE = 55 V
V CE = 75 V
0.5
0.5
mA
mA
I CEO
Collector Cut-off
Current (I B = 0)
for 2N6487/2N6490
for 2N6488
V CE = 30 V
V CE = 40 V
1
1
mA
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
I C = 200 mA
for 2N6487/2N6490
for 2N6488
60
80
V
V
V CER(sus) ∗ Collector-Emitter
Sustaining Voltage
(R BE = 100Ω)
I C = 200 mA
for 2N6487/2N6490
for 2N6488
65
85
V
V
V CEX(sus) ∗ Collector-Emitter
I C = 200 mA
Sustaining Voltage
for 2N6487/2N6490
(V BE =-1.5V, R BE =100Ω) for 2N6488
70
90
V
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 5 A
I C = 15 A
I B = 0.5 A
IB = 5 A
1.3
3.5
V
V
V BE ∗
Base-Emitter Voltage
IC = 5 A
I C = 15 A
V CE = 4 V
V CE = 4 V
1.3
3.5
V
V
h FE ∗
DC Current Gain
IC = 5 A
I C = 15 A
V CE = 4 V
V CE = 4 V
Small Signal Current
Gain
IC = 1 A
IC = 1 A
V CE = 4 V
V CE = 4 V
h fe
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
2/4
20
5
f = 1MHz
f = 1KHz
5
25
150
2N6487 / 2N6488 / 2N6490
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
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2N6487 / 2N6488 / 2N6490
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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