74V1G66 SINGLE BILATERAL SWITCH ■ ■ ■ ■ ■ HIGH SPEED: tPD = 0.3 ns (TYP.) at VCC = 5V tPD = 0.4 ns (TYP.) at VCC = 3.3V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC LOW ”ON” RESISTANCE: RON = 10Ω (TYP.)AT VCC = 5.0V II/O=100µA RON = 12Ω (TYP.)AT VCC = 3.3V II/O=100µA SINE WAVE DISTORTION 0.04% (TYP.) AT VCC=3.3V f=1KHz WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5V DESCRIPTION The 74V1G66 is an high-speed CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This feature makes this part ideal for battery-powered equipment. This bilateral switch handles rail to rail analog and digital signals that may vary across the full SOT23-5L SC-70 ORDER CODES PACKAGE T UBE T& R SOT23-5L 74V1G66S-TR SC-70 74V1G66C-TR power-supply range (from Vcc to Ground). The C input is provided to control the switch and it’s compatible with standard CMOS output; the switch is ON when the C input is held high and off when C is held low. It can be used in many application as Battery Powered System, Audio Signal Routing, Communications System, Test Equipment. It’s available in the commercial temperature range in SOT23-5L and SC-70-5L package. PIN CONNECTION AND IEC LOGIC SYMBOLS June 2000 1/9 74V1G66 LOGIC DIAGRAM PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCT ION 1 I/O Independent Input/Output 2 O/I Independent Output/Input 4 C Enable Input (Active HIGH) 3 GND Ground (0V) 5 VCC Positive Supply Voltage TRUTH TABLE CONTROL SWITCH F UNCTIO N H ON L OFF ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage VI DC Input Voltage V IC DC Control Input Voltage VO DC Output Voltage IIK DC Input Diode Current Value Unit -0.5 to +7 V -0.5 to VCC + 0.5 V -0.5 to 7 V -0.5 to VCC + 0.5 V ± 20 mA IIK DC Control Input Diode Current - 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 50 mA ± 50 mA ICC or IGND DC VCC or Ground Current Tstg TL Storage Temperature Lead Temperature (10 sec) -65 to +150 o 300 o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC Valu e Unit Supply Voltage (note 1) Parameter 2 to 5.5 V VI Input Voltage 0 to VCC V V IC Control Input Voltage 0 to 5.5 V VO Output Voltage Top Operating Temperature: dt/dv Input Rise and Fall Time (note 2) 1) Truth Table guaranteed: 1.2V to 5.5V 2) VIN from 30% to70%VCC 2/9 0 to VCC -40 to +85 0 to 10 V o C ns/V 74V1G66 DC SPECIFICATIONS Symb ol VIH VIL R ON Parameter High Level Control Input Voltage Low Level Control Input Voltage ON Resistance T est Cond ition s Value T A = 25 o C Un it -40 to 85 o C V CC (V) Min. 2.0 1.5 1.5 2.7 to 5.5 0.7VCC 0.7VCC Typ . Max. Min . Max. V 2.0 0.5 0.5 2.7 to 5.5 0.3VCC 0.3VCC 3.3 (**) 5.0 (*) (**) 3.3 5.0 (*) V IC = V IH V I/O = V CC to G ND II/ O ≤ 1mA V IC = V IH V I/ O = VCC or GND II/ O ≤ 1mA 14 26 30 12 17 20 12 18 24 10 14 18 V Ω IOFF Input/Output Leakage Current (SWITCH OFF) 5.5 V OS = V CC to GND V IS = V CC to G ND V I C = VI L ±0.1 ±1.0 IIZ Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) 5.5 VOS = VCC to GND VIC = VIH ±0.1 ±1.0 µA IIN Control Input Leakage Current 0 to 5.5 VIC = 5.5V or GND ±0.1 ±1.0 µA ICC Quiescent Supply Current 5.5 V IC = V CC or GND 1 10 µA µA (*) Voltage range is 5V ± 0.5V (**) Voltagerange is 3.3V ± 0.3V 3/9 74V1G66 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t r = tf =3 ns) Symb ol Parameter Test Co ndition V CC (V) (*) tPD Delay Time 3.3 5.0(**) tPZL tPZH Output Enable Time tPLZ tPHZ Output Disable Time 3.3(*) 5.0(**) 3.3(*) 5.0(**) C IN Input Capacitance CI/O Switch Terminal Capacitance CPD Power Dissipation Capacitance (note 1) Value T A = 25 o C Min. Typ . Max. t r = tf =6 ns R L = 1kΩ R L = 500 Ω Un it -40 to 85 o C Min . Max. 0.4 0.3 0.8 0.6 1.2 1.0 2.5 2.0 5.0 5.0 5 4.0 4.0 7.5 7.5 5.0 5.0 9.0 9.0 ns ns pF 10 3.3 5.0 ns pF 2.5 3 pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC (switch). (*) Voltage range is 3.3V ± 0.3V (**) Voltagerange is 5V ± 0.5V ANALOG SWITCH CHARACTERISTICS (GND = 0 V, TA = 25oC) Symb ol fMAX Parameter Value Un it 0.04 0.04 % Adjust fI N voltage to Obtain 0dBm at V OS . Increase fIN Frequency until dB Meter reads -3dB R L = 50Ω, C L = 10pF 150 180 MHz 3.3 5.0(*) VIN is centered at VCC /2. Adjust fIN voltage to obtain 0dBm at VIS RL = 600Ω, CL = 50pF, fIN = 1MHz sine wave -60 -60 dB 3.3 5.0(*) R L = 600Ω, CL = 50pF, fIN = 1MHz square wave tr = tf = 6 ns 60 60 mV Sine Wave Distortion (THD) V IN (Vp-p) 2.75 Frequency Response (Switch ON) 3.3 5.0(*) Feedthrough Attenuation (Switch OFF) Crosstalk (Control Input to Signal Output) (*) Voltage range is 5V ± 0.5V 4/9 Test Co nditi on V CC (V) 3.3 5.0(*) fIN = 1 KHz RL = 10KΩ CL = 50 pF 4 74V1G66 SWITCHING CHARACTERISTICS TEST CIRCUIT tPLZ, tPHZ, tPZL, tPZH. FEEDTHROUGH ATTENUATION BANDWIDTH ATTENUATION CI–O CI/O MAXIMUM CONTROL FREQUENCY GND (VSS) CROSSTALK (control to output) 5/9 74V1G66 CHANNEL RESITANCE (RON) 6/9 ICC (Opr.) 74V1G66 SOT23-5L MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 2.60 3.00 102.3 118.1 E1 1.50 1.75 59.0 68.8 L 0.35 0.55 13.7 21.6 e 0.95 37.4 e1 1.9 74.8 7/9 74V1G66 SC-70 MECHANICAL DATA mm DIM. MIN. 8/9 TYP. mils MAX. MIN. TYP. MAX. A 0.80 1.10 31.5 43.3 A1 0.00 0.10 0.0 3.9 A2 0.80 1.00 31.5 39.4 b 0.15 0.30 5.9 11.8 C 0.10 0.18 3.9 7.1 D 1.80 2.20 70.9 86.6 E 1.80 2.40 70.9 94.5 E1 1.15 1.35 45.3 53.1 L 0.10 0.30 3.9 11.8 e 0.65 25.6 e1 1.3 51.2 74V1G66 Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 9/9