AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .. .. .. . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 100 W MIN. WITH 6.0 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-100 BRANDING 1214-100 PIN CONNECTION DESCRIPTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-100 is supplied in the grounded IMPAC™ hermetic metal/ceramic package with internal input/output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol PDISS IC VCC TJ TSTG Parameter Value Unit 270 W 13.5 A Collector-Supply Voltage* 32 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.55 °C/W Power Dissipation* (TC ≤ 100˚C) Device Current* Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/3 AM1214-100 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BVCBO IC = 50mA IE = 0mA 65 — — V BVEBO IE = 10mA IC = 0mA 3.5 — — V BVCES IC = 100mA 65 — — V ICES VBE = 0V VCE = 32V — — 20 mA hFE VCE = 5V IC = 5A 15 — — — DYNAMIC Value Symbol Test Conditions Typ. Max. Unit POUT ηc f = 1215 — 1400MHz PIN = 25W VCC = 28V 100 — — W f = 1215 — 1400MHz PIN = 25W VCC = 28V 50 — — % GP f = 1215 — 1400MHz PIN = 25W VCC = 28V 6.0 — — dB Note: Pulse Width Duty Cycle = = 100 µ Sec 10% PACKAGE MECHANICAL DATA 2/3 Min. AM1214-100 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3