AM1214-175 .. .. .. .. RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-175 BRANDING 1214-175 PIN CONNECTION DESCRIPTION The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-175 is supplied in the BIGPAC Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 330 W Device Current* 14 A Collector-Supply Voltage* 45 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.45 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/6 AM1214-175 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 60mA IE = 0mA 65 — — V BVEBO IE = 10mA IC = 0mA 3.5 — — V BVCES IC = 100mA 65 — — V ICES VCE = 40V — — 25 mA hFE VCE = 5V 15 — 150 — IC = 5A DYNAMIC Symbol Min. Typ. Max. Unit POUT ηc f = 1215 — 1400MHz PIN = 30W VCC = 40V 160 180 — W f = 1215 — 1400MHz PIN = 30W VCC = 40V 45 50 — % GP f = 1215 — 1400MHz PIN = 30W VCC = 40V 7.3 7.8 — dB Note: Pul se Widt h Duty Cycle 2/6 Value Test Conditions = = 150 µ S 5% AM1214-175 TYPICAL PERFORMANCE TYPICAL BROADBAND POWER AMPLIFIER RELATIVE POWER OUTPUT AND COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE 3/6 AM1214-175 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN PIN = 30 W VCC = 40 V Z0* = 50 ohms L = 1215 MHz ZIN (Ω) 4.0 + j 3.5 ZCL (Ω) 2.0 − j 2.5 M = 1300 MHz 2.0 + j 3.0 2.0 − j 1.5 H = 1400 MHz 1.5 + j 4.0 1.5 − j 2.5 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 30 W VCC = 40 V Z 0* = 50 ohms *Normalized Impedance 4/6 AM1214-175 TEST CIRCUIT Ref. Dwg. No.: 104-001280 PACKAGE MECHANICAL DATA 5/6 AM1214-175 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6