AM81214-015 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 14.5 W MIN. WITH 8.6 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM 81214-015 BRANDING 81214-15 PIN CONNECTION DESCRIPTION The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM81214-015 is supplied in the grounded IMPAC Hermetic Metal/Ceramic package with internal input/output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 37.5 W Device Current* 1.8 A Collector-Supply Voltage* 32 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 4.0 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/4 AM81214-015 ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Value Symbol Test Conditions Min . Typ. Max. Unit BV CBO IC = 15mA IE = 0mA 48 — — V BV EBO IE = 1.5mA IC = 0mA 3.5 — — V BV CER IC = 15mA RBE = 10Ω 48 — — V ICES VCE = 28V VBE = 28V — — 1.5 mA hFE VCE = 5V IC = 1A 30 — 300 — DYNAMIC Value Symbol Test Conditions Typ. Max. Unit PIN ηc f = 1.2 — 1.4GHz PIN = 2W Peak VCC = 28V 14.5 17.0 — W f = 1.2 — 1.4GHz PIN = 2W Peak VCC = 28V 48 58 — % GP f = 1.2 — 1.4GHz PIN = 2W Peak VCC = 28V 8.6 9.3 — dB Note: Pul se Widt h Duty Cycle = = 1000 µS 10% TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE 2/4 Min . AM81214-015 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL FREQ. ZIN (Ω) ZCL (Ω) L = 1.2 GHz 3.0 + j 6.5 16 + j 3.0 M = 1.3 GHz 3.5 + j 7.5 13 + j 6.0 H = 1.4 GHz 5.0 + j 7.0 11 + j 5.0 PIN = 2 W VCC = 28 V Normalized to 50 ohms TEST CIRCUIT 3/4 AM81214-015 PACKAGE MECHANICAL DATA .318/ .306 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4