AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS .. .. .. PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE AM81719-040 BRANDING 81719-40 PIN CONNECTION DESCRIPTION The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wirebonding is employed to ensure long-term reliability and product consistency. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Valu e Un it Power Dissipation* 79.5 W Device Current* 4.8 A Collector-Supply Voltage* 30 V TJ Junction Temperature 200 °C T STG Storage Temperature − 65 to +200 °C 2.2 °C/W PDISS IC VCC Parameter THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation July 6, 1995 1/3 AM81719-040 ELECTRICAL SPECIFICATIONS (T case = 25 °C) STATIC Symbo l Value T est Co nditions Min . T yp. Max. Unit BVCBO IC = 50 mA IE = 0 mA 42 — — V BVEBO IE = 4 mA IC = 0 mA 3.5 — — V BVCES IC = 80 mA 45 — — V ICBO VCB = 28 V — — 8 mA hFE VCE = 30 V 30 — 300 — IC = 2.5 A DYNAMIC Symbo l Valu e Test Cond ition s Min. T yp. Max. Un it POUT ηc f = 1750 − 1850 MHz PIN = 8.0 W VCC = 28 V 40 — — W f = 1750 − 1850 MHz PIN = 8.0 W VCC = 28 V 43 — — % GP f = 1750 − 1850 MHz PIN = 8.0 W VCC = 28 V 6.7 — — dB TEST CIRCUIT Ref.: Dwg. No. 101-000698 July 6, 1995 2/3 AM81719-040 PACKAGE MECHANICAL DATA Ref: Dwg. No. 12-0228 rev. B Information furnished is believed to be accurate and reliable. However, SGS-T HOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. July 6, 1995 3/3