AM81720-012 RF & MICROWAVE TRANSISTORS COMMUNICATIONS APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 7.4 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM81720-012 BRANDING 81720-12 PIN CONNECTION DESCRIPTION The AM81720-012 is designed specifically for Telecommunications applications. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/gold metallization system. The unique AMPAC™ devices are housed in Hermetic Metal/Ceramic packages with internal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Value Unit Power Dissipation* 31.8 W Device Current* 1.47 A Collector-Supply Voltage* 24 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C 5.5 °C/W PDISS IC VCC Parameter THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance *Applies only to rated RF amplifier operation NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. September 1992 1/4 AM81720-012 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 5mA IE = 0mA 45 — — V BVEBO IE = 5mA IC = 0mA 3.0 — — V — — 1.25 mA 15 — 150 — ICBO VCB = 24V hFE VCE = 5V IC = 1A DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT ηc f = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 12 — — W f = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 40 — — % GP f = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 7.4 — — dB TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/4 Unit COLLECTOR EFFICIENCY vs POWER INPUT AM81720-012 TEST CIRCUIT Ref.: Dwg.No. J125331 PACKAGE MECHANICAL DATA 3/4 AM81720-012 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4