AM83135-015 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .. .. .. . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 15 W MIN. WITH 5.2 dB GAIN DESCRIPTION The AM83135-015 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. .310 x .310 2LFL (S064) ORDER CODE AM83131-015 BRANDING 83135-15 PIN CONNECTION This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM83135-015 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol PDISS IC VCC TJ TSTG Parameter Value Unit 71 W Device Current* 3.0 A Collector-Supply Voltage* 46 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 2.8 °C/W Power Dissipation* (TC ≤ 50˚C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation July 27, 1994 1/3 AM83135-015 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 10 mA IE = 0 mA 55 — — V BVEBO IE = 2 mA IC = 0 mA 3.5 — — V BVCER IC = 10 mA RBE = 10 Ω 55 — — V ICES VBE = 0 V VCE = 40 V — — 8 mA hFE VCE = 5 V IC = 1 A 30 — 300 — DYNAMIC Symbol Min. Typ. Max. Unit POUT ηc f = 3.1 − 3.5 GHz PIN = 4.5 W VCC = 40 V 15 — — W f = 3.1 − 3.5 GHz POUT = 15 W VCC = 40 V 30 — — % PG f = 3.1 − 3.5 GHz POUT = 15 W VCC = 40 V 5.2 — — dB Note: Pulse Width Duty Cycle 2/3 Value Test Conditions = = 100 µ S 10% AM83135-015 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0221 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 3/3