AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .. . .. .. . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 5.2 dB GAIN .310 x .310 2LF L (S064) hermetically sealed O RDER CODE AM83135-050 DESCRIPTION The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. BRANDING 83135-50 PIN CONNECTION This device is characterized at 10 µsec pulsewidth and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM83135-050 is supplied in the IMPAC Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25° C) Symbol PDISS IC VCC TJ TSTG Parameter Value Un it 312 W Device Current* 8.0 A Collector-Supply Voltage* 48 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.40 °C/W Power Dissipation* (TC ≤ 125°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation November 27, 1996 1/6 AM83135-050 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 25mA I E = 0mA 55 — — V BVEBO IE = 5mA I C = 0mA 3.5 — — V BVCER IC = 25mA RBE = 10W 55 — — V ICES VBE = 0V V CE = 42V — — 20 mA hFE VCE = 5V I C = 3A 30 — 300 — DYNAMIC Symbol Min. Typ. Unit Max. POUT ηc f = 3.1 — 3.5GHz P IN = 15W VCC = 42V 50 — f = 3.1 — 3.5GHz P IN = 15W VCC = 42V 30 — — % GP f = 3.1 — 3.5GHz P IN = 15W VCC = 42V 5.2 — — dB Note: P uls e Wi dth D uty Cycl e 2/6 Value Test Conditions = = 10 µ Sec 10% W AM83135-050 TYPICAL PERFORMANCE OUTPUT POWER vs FREQUENCY COLLECTOR EFFICIENCY vs COLLECTOR SUPPLY VOLTAGE OUTPUT POWER vs COLLECTOR SUPPLY VOLTAGE COLLECTOR EFFICIENCY vs FREQUENCY 3/6 AM83135-050 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 15 W VCC = 42 V ZO* = 50 ohms FREQ. Z IN (Ω) ZCL (Ω) L = 3.1 GHz 16.5 + j 13.5 7.7 − j 11.8 M = 3.3 GHz 10.8 + j 5.5 6.5 − j 7.2 H = 3.5 GHz 6.7 + j 5.2 3.8 − j 6.7 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 15 W VCC = 42 V Z O* = 50 ohms *Normalized 4/6 AM83135-050 TEST CIRCUIT All dimensions are in mils. Substrate material: 25 mil thick Al2O3 (Er = 9.6) C - 0.3 to 1.2 pF Johanson Gigatrim L - 1 Turn #26 wire .80 I.D. 5/6 AM83135-050 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0221 UDCS No. 1011424 rev A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. 6/6