BAS70-07 ® SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE A2 A1 A2 K1 K2 A1 K2 K1 DESCRIPTION Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits. Packaged in SOT-143, this device is intended for surface mounting. Its dual independent diodes configuration makes it very interesting for applications where high integration is searched. SOT-143 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Parameter Value Unit Repetitive peak reverse voltage 70 V Continuous forward current 15 mA tp = 10ms 1 A Tamb = 25°C 310 mW - 65 to +150 °C IFSM Surge non repetitive forward current Ptot Power Dissipation (note 1) Tstg Storage temperature range Tj Maximum operating junction temperature * 150 °C TL Maximum temperature for soldering during 10s 260 °C Value Unit 400 °C/W Note 1: Ptot is the total dissipation of both diodes. * : dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient (*) (*) Mounted on epoxy board with recommended pad layout. June 1999 - Ed: 2A 1/4 BAS70-07 STATIC ELECTRICAL CHARACTERISTICS Symbol VF * Tests Conditions Tests Conditions Forward voltage drop Tj = 25°C Min. Typ. Max. Unit IF = 1 mA 410 mV IF = 10 mA 750 mV IF = 15 mA 1 V VBR Breakdown voltage Tj = 25°C IR = 10 µA IR ** Reverse leakage current Tj = 25°C VR = 50 V 200 nA VR = 70 V 10 µA Max. Unit Pulse test: 70 V * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% DYNAMIC CHARACTERISTICS (Tj = 25 °C) Symbol Parameters Tests Conditions Junction capacitance VR = 1 V F = 1 MHz 2 pF trr Reverse recovery time IF = 10 mA IR = 10 mA Irr = 1 mA RL = 100 Ω 5 ns τ Effective carrier lifetime IF = 5 mA Krakauer method 100 ps Fig.2 : Continuous forward current versus ambient temperature. PF(av)(W) 2/4 Typ. C Fig.1 : Average forward power dissipation versus average forward current. 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 Min. 80 δ = 0.1 δ = 0.2 70 δ = 0.5 δ = 0.05 IF(mA) 60 50 δ=1 40 30 T IF(av) (mA) 0 10 20 30 40 50 δ=tp/T 60 70 20 10 tp 80 0 Tamb(°C) 0 25 50 75 100 125 150 BAS70-07 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) IM(A) 1.00 0.30 Ta=25°C δ = 0.5 0.25 Ta=50°C δ = 0.2 0.20 0.10 0.15 δ = 0.1 Ta=100°C 0.10 T IM 0.05 Single pulse t t(s) δ=0.5 0.00 1E-3 1E-2 1E-1 1E+0 Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). 1E+1 δ=tp/T tp(s) IR(µA) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 tp 1E+2 Fig.6 : Reverse leakage current versus junction temperature (typical values). 1E+2 IR(µA) Tj=100°C VR=70V 1E+0 1E+1 1E+0 1E-1 Tj=25°C 1E-1 1E-2 Tj(°C) VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). C(pF) 2.0 1E-2 0 25 50 75 100 125 Fig.8 : Forward voltage drop versus forward current. 7E-2 IFM(A) Tj=100°C Typical values F=1MHz Tj=25°C 1.0 1E-2 Tj=25°C Maximum values 1E-3 VR(V) 0.1 1 10 100 Tj=25°C Typical values VFM(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 BAS70-07 PACKAGE MECHANICAL DATA SOT-143 DIMENSIONS REF. D e1 C L E H e2 b b1 A A1 Millimeters Inches Min. Max. Min. Max. A 0.8 1.2 A1 0.01 0.127 0.0004 0.005 b 0.35 0.6 0.014 0.024 b1 0.55 0.95 0.022 0.037 C 0.085 0.2 0.003 0.008 D 2.8 3.04 0.11 0.12 E 1.2 1.4 0.047 0.055 0.0314 0.0472 e1 1.90 Typ. 0.075 Typ. e2 0.2 Typ. 0.008 Typ. H L 2.1 2.64 0.55 Typ. 0.083 0.103 0.022 Typ. FOOTPRINT DIMENSIONS (millimeters) 1.92 0.95 0.2 2.25 1.1 0.65 MARKING Type Marking Package Weight Base qty Delivery mode BAS70-07 D99 SOT-143 0.01g. 3000 Tape & reel Information furnished is believed to be accurate and reliable. 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