BAT 41 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive Peak Reverse Voltage Value Unit 100 V Forward Continuous Current* Ta = 25 °C 100 mA IFRM Repetitive Peak Forward Current* tp ≤ 1s δ ≤ 0.5 350 mA IFSM Surge non Repetitive Forward Current* tp ≤ 10ms 750 mA Ta = 95°C IF Ptot Power Dissipation* Tstg Tj Storage and Junction Temperature Range TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 100 mW - 65 to +150 - 65 to +125 °C °C 230 °C Value Unit 300 °C/W THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * * IR * * Test Conditions Tj = 25°C Min. Tj = 25°C IF = 1mA Tj = 25°C IF = 200mA Typ. Max. Unit 0.4 0.45 V 100 IR = 100µA V 1 VR = 50V Tj = 25°C 0.1 µA 20 Tj = 100°C DYNAMIC CHARACTERISTICS Symbol C Test Conditions Tj = 25°C VR = 1V Min. f = 1MHz Typ. 2 Max. Unit pF * On infinite heatsink with 4mm lead length * * Pulse test: tp ≤ 300µs δ < 2%. August 1999 Ed: 1A 1/4 BAT 41 Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus continuous reverse voltage (typical values). 2/4 BAT 41 Figure 5. Capacitance C versus reverse applied voltage VR (typical values). 3/4 BAT 41 PACKAGE MECHANICAL DATA DO 35 Glass DIMENSIONS REF. B A note 1 E B E note 1 /D O /C O Millimeters Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 12.7 D 0.458 0.500 0.558 0.018 0.022 O /D note 2 Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4