BC393 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC393 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. The complementary NPN type is the BC394. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-base Voltage (I E = 0) – 180 V V CEO Collector-emitter Voltage (I B = 0) – 180 V V EBO Emitter-base Voltage (I C = 0) IC Parameter Collector Current – 6 V – 100 mA 0.4 1.4 W W Pt o t Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C T st g Storage Temperature – 55 to 200 °C Tj Junction Temperature 200 °C January 1989 1/5 BC393 THERMAL DATA R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Ma x Ma x °C/W °C/W 125 440 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CB O V ( BR) V (BR) CBO CEO * V ( BR) V CE V BE EBO (s at ) * ( sat ) * hFE * fT C CBO Parameter Collector Cutoff Current (I E = 0 ) Test Conditions Min. Typ. Max. Unit 50 50 nA µA V CB = – 100 V V CB = – 100 V T amb = 150 °C Collector-base Breakdown Voltage (I E = 0 ) I C = – 10 µA – 180 V Collector-emitter Breakdown Voltage (I B = 0 ) I C = – 2 mA – 180 V Emiter-base Breakdown Voltage (I C = 0 ) I E = – 10 µA –6 V Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Curent Gain Transition frequency Collector-base Capacitance I C = – 10 mA I C = – 50 mA I B = – 1 mA I B = – 5 mA – 100 – 230 – 300 mV mV I C = – 10 mA I C = – 50 mA I B = – 1 mA I B = – 5 mA – 750 – 850 – 900 mV mV I C = – 1 mA I C = – 10 mA V CE = – 10 V V CE = – 10 V 50 85 100 I C = – 10 mA V CE = – 10 V 50 95 IE = 0 f = 1 MHz V CB = – 10 V 4 * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. DC Current Gain. 2/5 Collector-emitter Saturation Voltage. MHz 7 pF BC393 Base-emitter Saturation Voltage. Transition Frequency. 3/5 BC393 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 4/5 BC393 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5