BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA ■ ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN COMPLEMENTS ARE BCP55 AND BCP56 RESPECTIVELY 2 2 1 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BCP52 BCP53 V CBO Collector-Base Voltage (I E = 0) -60 -100 V V CEO Collector-Emitter Voltage (I B = 0) -60 -80 V V CER Collector-Emitter Voltage (R BE = 1KΩ) -60 V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -1 A IC I CM IB V Collector Peak Current (t p < 5 ms) -1.5 A Base Current -0.1 A -0.2 A 2 W I BM Base Peak Current (t p < ms) P tot Total Dissipation at T c = 25 o C T stg Storage Temperature Tj -100 Max. Operating Junction Temperature October 1997 -65 to 150 o C 150 o C 1/4 BCP52/53 THERMAL DATA R thj-amb • R thj-tab • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max o 62.5 8 o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Test Conditions Min. Typ. Max. Unit -100 -10 nA µA Collector Cut-off Current (I E = 0) V CB = -30 V V CB = -30 V Collector-Base Breakdown Voltage (I E = 0) I C = -100 µA for BCP52 for BCP53 -60 -100 V V I C = -20 mA for BCP52 for BCP53 -60 -80 V V Collector-Emitter Breakdown Voltage (R BE = 1 KΩ) I C = -100 µA for BCP52 for BCP53 -60 -100 V V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = -10 µA -5 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -500 mA I B = -50 mA -0.5 V V BE(on) ∗ Base-Emitter On Voltage I C = -500 mA V CE = -2 V -1 V h FE ∗ DC Current Gain IC IC IC IC IC V CE = V CE = V CE = V CE = V CE = V (BR)CBO V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CER fT Transition Frequency = = = = = -2 V -2 V for Gr. 6 -2 V for Gr. 10 -2 V for Gr. 16 -2 V I C = -10 mA V CE = -5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 -5 mA -150 mA -150 mA -150 mA -500 mA T j = 125 o C f = 35 MHz 25 40 63 100 25 100 160 250 50 MHz BCP52/53 SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 3/4 BCP52/53 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4