BD234 SILICON PNP TRANSISTOR ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V V CBO Collector-Base Voltage (I E = 0) -45 V CER Collector-Emitter Voltage (R BE = 1KΩ) -45 V V CEO Collector-Emitter Voltage (I B = 0) -45 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -2 A I CM Collector Peak Current -6 A P tot Total Dissipation at T c ≤ 25 o C T stg Storage Temperature IC Tj May 1997 Max. Operating Junction Temperature 25 W -65 to 150 o C 150 o C 1/4 BD234 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) V CB = -45 V V CB = -45 V Emitter Cut-off Current (I C = 0) V EB = -5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ Test Conditions Typ. o T c = 150 C I C = -100 mA Max. Unit -0.1 -2 mA mA -1 mA -45 V Collector-Emitter Saturation Voltage I C = -1 A I B = -0.1 A -0.6 V V BE ∗ Base-Emitter Voltage I C = -1 A V CE = -2 V -1.3 V h FE ∗ DC Current Gain I C = -150 mA I C = -1 A V CE = -2 V V CE = -2 V 40 25 Transition frequency I C = -250 mA V CE = -10 V 3 I C = -150 mA V CE = -2 V fT h FE1 /h FE2 ∗ Matched Pairs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 Min. MHz 1.6 BD234 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 3/4 BD234 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4